N-Channel 250V 2.8A (Ta), 4.1A (Tc) 2.9W (Ta), 6W (Tc) Surface Mount 8-SO
N-Channel 250V 2.8A (Ta), 4.1A (Tc) 2.9W (Ta), 6W (Tc) Surface Mount 8-SO
N-Channel 250V 2.8A (Ta), 4.1A (Tc) 2.9W (Ta), 6W (Tc) Surface Mount 8-SO
Trans MOSFET N-CH 250V 2.8A 8-Pin SOIC N T/R Product overview: SI4434ADY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 2.8A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 2.8A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4434ADY-T1-GE3
MOSFET N-CH 250V 2.8A/4.1A 8SO
Win Source Part Number: 1277688-SI4434ADY-T1
Category: Discrete Semiconductor Products>Transistors
Series: ThunderFET®
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.9W (Ta), 6W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SI4434ADY-T1-GE3DKR,
Base Product Number: SI4434
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
MOSFET, N-CH, 250V, 4.1A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 250V 2.8A/4.1A 8SO
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4434ADY-T1-GE3CT-ND | 278-SI4434ADY-T1-GE3 | SI4434ADY-T1-GE3 | 1277688-SI4434ADY-T1-GE3 | 56AC6587 | SI4434ADY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | 250V 2.8A SOIC MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 250V, 4.1A, Soic; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Tape and Reel | 8-SOIC (0.154", 3.90mm Width) | SOT3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 250 volts | 250 volts | ||||
| PD | 2900 milliwatts | 2900 milliwatts |
