The Vishay Si4431CDY is a P-channel MOSFET transistor with a maximum drain-source voltage (V_DS) of -30 V and a continuous drain current (I_D) rating of -9 A. It features a low on-state resistance (R_DS(on)) of 0.026 Ohm at a gate-source voltage (V_GS) of -10 V, making it suitable for applications requiring efficient power management. The device is RoHS compliant and halogen-free, adhering to environmental standards. It has a gate-source threshold voltage (V_GS(th)) ranging from -1.0 V to -2.5 V and a total gate charge (Q_g) of approximately 13 nC, indicating good switching performance. The MOSFET is packaged in an SO-8 form factor, which is beneficial for space-constrained designs. This component is ideal for load and battery switching applications.
P-Channel JFET, 30V, 7A ID, 32mR Rds(on), SOIC Product overview: SI4431CDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4431CDY-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 028486-SI4431CDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1006pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 32 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
P-Channel 30V 9A (Tc) 2.5W (Ta), 4.2W (Tc) Surface Mount 8-SOIC
P-Channel 30V 9A (Tc) 2.5W (Ta), 4.2W (Tc) Surface Mount 8-SOIC
P-Channel 30V 9A (Tc) 2.5W (Ta), 4.2W (Tc) Surface Mount 8-SOIC
MOSFET P-CH 30V 9A 8SO
(PRICE/TC) MOSFET TRANSISTOR, P CHANNEL, -9 A, -30 V, 0.026 OHM, -10 V, -2.5 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
30V 9A 32mΩ@10V,7A 2.5V@250uA P Channel SOIC-8 MOSFETs ROHS
30V 9A 4.2W 32mΩ@10V,7A 2.5V@250uA P Channel SOIC-8_150mil MOSFETs ROHS
MOSFET P-CH 30V 9A 8SO
MOSFET, P CHANNEL, -30V, -9A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:4.2W RoHS Compliant: Yes
MOSFET Transistor, P Channel, -9 A, -30 V, 0.026 ohm, -10 V, -2.5 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Radwell International | LCSC Electronics Technology (HK) Limited | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
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| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4431CDY-T1-GE3 | 028486-SI4431CDY-T1-GE3 | SI4431CDY-T1-GE3TR-ND | SI4431CDY-T1-GE3 | 8123215P | 8123215 | SI4431CDY-T1-GE3 | 22252146 | SI4431CDY-T1-GE3 | 17930-SI4431CDY-T1-GE3 | SI4431CDY-T1-GE3 | 29X0533 | 23T8505 |
| Product Name | P-Channel 30V 7A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4431CDY-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | MOSFET | Transistor | Triode/MOS Tube/Transistor >> MOSFETs | 30V 9A 4.2W 32mΩ@10V,7A 2.5V@250uA P Channel SOIC-8_150mil MOSFETs ROHS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, -30V, -9A, Soic-8, Full Reel; Channel Type Vishay | Mosfet Transistor, P Channel, -9 A, -30 V, 0.026 Ohm, -10 V, -2.5 V Rohs Compliant Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||||
| PD | 4200 milliwatts | 2500 to 4200 milliwatts | 2500 milliwatts | 2500 milliwatts | 4200 milliwatts | ||||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||||||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOIC | Soic | Surface Mount | TO-3 | TO-3 |
