Vishay Intertechnology, Inc. P-Channel 30V 7A MOSFET Transistor SI4431CDY-T1-E3

P-Channel JFET, 30V Vdss, 7A ID, 32mR Rds(on), SO Package Product overview: SI4431CDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4431CDY-T1-E3 can be used for catalog matching and distributor lookup.

P-Channel 30V 9A (Tc) 4.2W (Tc) Surface Mount 8-SOIC

P-Channel 30V 9A (Tc) 4.2W (Tc) Surface Mount 8-SOIC

P-Channel 30V 9A (Tc) 4.2W (Tc) Surface Mount 8-SOIC

Manufacturer: Vishay
Win Source Part Number: 042599-SI4431CDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1006pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 32 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management