P-channel MOSFET in an SO-8 package for surface mounting, rated for a drain-source voltage of -30 V and continuous drain current of -7.5 A at 25 °C with a maximum on-state resistance of 0.030 Ω at -10 V gate-source voltage. The device meets IEC 61249-2-21 halogen-free requirements and is RoHS-compliant. Operating junction and storage temperature range is -55 °C to 150 °C.
P CHANNEL MOSFET, 30V, -7.5A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 26AC3330 |
| Product Name | P Channel Mosfet, 30V, -7.5A, Soic; Channel Type Vishay |
| Polarity | P-Channel |
