Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4431BDY-T1-E3

Description
P-Channel 30V 5.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
P-Channel 30V 5.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4431BDY-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4431BDY-T1-E3DKR-ND
Single FETs, MOSFETs SI4431BDY-T1-E3DKR-ND
P-Channel 30V 5.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

P-Channel 30V 5.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4431BDY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4431BDY-T1-E3CT-ND
Single FETs, MOSFETs SI4431BDY-T1-E3CT-ND
P-Channel 30V 5.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

P-Channel 30V 5.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

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Single FETs, MOSFETs - SI4431BDY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4431BDY-T1-E3TR-ND
Single FETs, MOSFETs SI4431BDY-T1-E3TR-ND
P-Channel 30V 5.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

P-Channel 30V 5.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4431BDY-T1-E3 - 028485-SI4431BDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4431BDY-T1-E3
028485-SI4431BDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4431BDY-T1-E3 028485-SI4431BDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 028485-SI4431BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.7A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 mOhm @ 7.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics

Manufacturer: Vishay
Win Source Part Number: 028485-SI4431BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.7A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 30 mOhm @ 7.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics

Buy Now Datasheet
Singapore, Singapore
P-Channel 30V MOSFET Transistor
278-SI4431BDY-T1-E3
P-Channel 30V MOSFET Transistor 278-SI4431BDY-T1-E3
P-Channel JFET, 30V, 1-Element, 8-Pin SOP Product overview: SI4431BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4431BDY-T1-E3 can be used for catalog matching and distributor lookup.

P-Channel JFET, 30V, 1-Element, 8-Pin SOP Product overview: SI4431BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4431BDY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 22252138 - Radwell International
Willingboro, NJ, United States
Transistor
22252138
Transistor 22252138
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 5.7A, 30V, 0.03OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 5.7A, 30V, 0.03OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4431BDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4431BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4431BDY-T1-E3
MOSFET P-CH 30V 5.7A 8SO

MOSFET P-CH 30V 5.7A 8SO

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V (D-S) 7.5A

MOSFET 30V (D-S) 7.5A

Buy Now Datasheet
Single FETs, MOSFETs - SI4431BDY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4431BDY-T1-E3
Single FETs, MOSFETs SI4431BDY-T1-E3
MOSFET P-CH 30V 5.7A 8SO

MOSFET P-CH 30V 5.7A 8SO

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Radwell International Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4431BDY-T1-E3DKR-ND 028485-SI4431BDY-T1-E3 278-SI4431BDY-T1-E3 22252138 SI4431BDY-T1-E3 SI4431BDY-T1-E3 SI4431BDY-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4431BDY-T1-E3 P-Channel 30V MOSFET Transistor Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
V(BR)DSS 30 volts 30 volts
PD 1500 milliwatts 1500 milliwatts
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7 suppliers