Manufacturer: Vishay
Win Source Part Number: 1095939-SI4430BDY-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 36nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
N-Channel JFET, 30V, 4.5mR Rds On, 14A ID, SOP-8 Product overview: SI4430BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4430BDY-T1-GE3
N-Channel 30V 14A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
N-Channel 30V 14A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
N-Channel 30V 14A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 30V 14A 8SO
N CHANNEL MOSFET, 30V, 20A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:20A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, N CHANNEL, 30V, 0.0037OHM, 14A, SOIC-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.6W RoHS Compliant: Yes
MOSFET 30V 20A 3.0W 4.5mohm @ 10V
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1095939-SI4430BDY-T1-GE3 | 278-SI4430BDY-T1-GE3 | SI4430BDY-T1-GE3DKR-ND | SI4430BDY-T1-GE3 | 16P3737 | 84W7286 | SI4430BDY-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4430BDY-T1-GE3 | N-Channel 30V 14A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, 20A, Soic; Channel Type Vishay | Mosfet, N Channel, 30V, 0.0037Ohm, 14A, Soic-8, Full Reel; Channel Type Vishay | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | ||||||
| PD | 1600 milliwatts | 1600 milliwatts | 1600 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
