P-Channel JFET, 30V, 9.7A ID, 10.5mR RDS(on), SOP-8 Product overview: SI4427BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 9.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.7A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4427BDY-T1-GE
P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 1095936-SI4427BDY-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.7A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 70nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 10.5 mOhm @ 12.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
P CHANNEL MOSFET, -30V, 12.6A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.5V; Power Dissipation:1.5W RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 12.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:600mV RoHS Compliant: Yes
MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
MOSFET P-CH 30V 9.7A 8SO
MOSFET P-CH 30V 9.7A 8SO
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-SI4427BDY-T1-GE3 | SI4427BDY-T1-GE3TR-ND | 1095936-SI4427BDY-T1-GE3 | 15R5013 | 26R1876 | SI4427BDY-T1-GE3 | SI4427BDY-T1-GE3 | SI4427BDY-T1-GE3 |
| Product Name | P-Channel 30V 9.7A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4427BDY-T1-GE3 | P Channel Mosfet, -30V, 12.6A, Soic, Full Reel; Channel Type Vishay | P Channel Mosfet, -30V, 12.6A, Soic; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | ||
| PD | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | 1500 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | TO-3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
