Vishay Precision Group P-Channel 30V 9.7A SOIC MOSFET Transistor SI4427BDY-T1-E3

Description
P-Channel JFET, 30V, 9.7A ID, 10.5mR Rds(on), SOIC Product overview: SI4427BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 9.7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.7A, SOIC, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4427BDY-T1-E3 can be used for catalog matching and distributor lookup.
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Description
P-Channel JFET, 30V, 9.7A ID, 10.5mR Rds(on), SOIC Product overview: SI4427BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 9.7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.7A, SOIC, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4427BDY-T1-E3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
P-Channel 30V 9.7A SOIC MOSFET Transistor
2088-SI4427BDY-T1-E3
P-Channel 30V 9.7A SOIC MOSFET Transistor 2088-SI4427BDY-T1-E3
P-Channel JFET, 30V, 9.7A ID, 10.5mR Rds(on), SOIC Product overview: SI4427BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 9.7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.7A, SOIC, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4427BDY-T1-E3 can be used for catalog matching and distributor lookup.

P-Channel JFET, 30V, 9.7A ID, 10.5mR Rds(on), SOIC Product overview: SI4427BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 9.7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.7A, SOIC, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4427BDY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4427BDY-T1-E3 - 028483-SI4427BDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4427BDY-T1-E3
028483-SI4427BDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4427BDY-T1-E3 028483-SI4427BDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 028483-SI4427BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Family Name: Si4427BDY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.7A (Ta) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 70nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 10.5 mOhm @ 12.6A, 10V Alternative Parts (Cross-Reference): STS10PF30L; BSO130P03SHXT; BSO130P03SNT; BSO130P03S H; Introduction Date: July 01, 2003 ECCN: EAR99 Estimated EOL Date: 2022 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028483-SI4427BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Family Name: Si4427BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.7A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 70nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 10.5 mOhm @ 12.6A, 10V
Alternative Parts (Cross-Reference): STS10PF30L; BSO130P03SHXT; BSO130P03SNT; BSO130P03S H;
Introduction Date: July 01, 2003
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI4427BDY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4427BDY-T1-E3CT-ND
Single FETs, MOSFETs SI4427BDY-T1-E3CT-ND
P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4427BDY-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4427BDY-T1-E3DKR-ND
Single FETs, MOSFETs SI4427BDY-T1-E3DKR-ND
P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4427BDY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4427BDY-T1-E3TR-ND
Single FETs, MOSFETs SI4427BDY-T1-E3TR-ND
P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4427BDY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4427BDY-T1-E3
Single FETs, MOSFETs SI4427BDY-T1-E3
MOSFET P-CH 30V 9.7A 8SO

MOSFET P-CH 30V 9.7A 8SO

Supplier's Site Datasheet
P Channel Mosfet, -30V, 12.6A, Soic; Channel Type Vishay - 85W3206 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -30V, 12.6A, Soic; Channel Type Vishay
85W3206
P Channel Mosfet, -30V, 12.6A, Soic; Channel Type Vishay 85W3206
P CHANNEL MOSFET, -30V, 12.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

P CHANNEL MOSFET, -30V, 12.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

Supplier's Site Datasheet
P Channel Mosfet, -30V, 12.6A, Soic, Full Reel; Channel Type Vishay - 06J7713 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -30V, 12.6A, Soic, Full Reel; Channel Type Vishay
06J7713
P Channel Mosfet, -30V, 12.6A, Soic, Full Reel; Channel Type Vishay 06J7713
P CHANNEL MOSFET, -30V, 12.6A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Power Dissipation:1.5W RoHS Compliant: Yes

P CHANNEL MOSFET, -30V, 12.6A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Power Dissipation:1.5W RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V 13.3A 3W

MOSFET 30V 13.3A 3W

Buy Now Datasheet
30V 9.7A 1.5W 10.5mΩ@10V,12.6A 1.4V@250uA P Channel SOIC-8_150mil MOSFETs ROHS - 17930-SI4427BDY-T1-E3 - Utmel Electronic Limited
Hong Kong, China
30V 9.7A 1.5W 10.5mΩ@10V,12.6A 1.4V@250uA P Channel SOIC-8_150mil MOSFETs ROHS
17930-SI4427BDY-T1-E3
30V 9.7A 1.5W 10.5mΩ@10V,12.6A 1.4V@250uA P Channel SOIC-8_150mil MOSFETs ROHS 17930-SI4427BDY-T1-E3
30V 9.7A 1.5W 10.5mΩ@10V,12.6A 1.4V@250uA P Channel SOIC-8_150mil MOSFETs ROHS

30V 9.7A 1.5W 10.5mΩ@10V,12.6A 1.4V@250uA P Channel SOIC-8_150mil MOSFETs ROHS

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4427BDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4427BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4427BDY-T1-E3
MOSFET P-CH 30V 9.7A 8SO

MOSFET P-CH 30V 9.7A 8SO

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 2088-SI4427BDY-T1-E3 028483-SI4427BDY-T1-E3 SI4427BDY-T1-E3CT-ND SI4427BDY-T1-E3 85W3206 06J7713 SI4427BDY-T1-E3 17930-SI4427BDY-T1-E3 SI4427BDY-T1-E3
Product Name P-Channel 30V 9.7A SOIC MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4427BDY-T1-E3 Single FETs, MOSFETs Single FETs, MOSFETs P Channel Mosfet, -30V, 12.6A, Soic; Channel Type Vishay P Channel Mosfet, -30V, 12.6A, Soic, Full Reel; Channel Type Vishay MOSFET 30V 9.7A 1.5W 10.5mΩ@10V,12.6A 1.4V@250uA P Channel SOIC-8_150mil MOSFETs ROHS Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel
PD 1500 milliwatts 1500 milliwatts 1500 milliwatts 1500 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
V(BR)DSS 30 volts 30 volts
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