MOSFET P-CH 30V 9.7A 8SO
Manufacturer: Vishay
Win Source Part Number: 028483-SI4427BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Family Name: Si4427BDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.7A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 70nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 10.5 mOhm @ 12.6A, 10V
Alternative Parts (Cross-Reference): STS10PF30L; BSO130P03SHXT; BSO130P03SNT; BSO130P03S H;
Introduction Date: July 01, 2003
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
P-Channel JFET, 30V, 9.7A ID, 10.5mR Rds(on), SOIC Product overview: SI4427BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 9.7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.7A, SOIC, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4427BDY-T1-E3
P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
P CHANNEL MOSFET, -30V, 12.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
P CHANNEL MOSFET, -30V, 12.6A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Power Dissipation:1.5W RoHS Compliant: Yes
MOSFET P-CH 30V 9.7A 8SO
30V 9.7A 1.5W 10.5mΩ@10V,12.6A 1.4V@250uA P Channel SOIC-8_150mil MOSFETs ROHS
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4427BDY-T1-E3 | 028483-SI4427BDY-T1-E3 | 2088-SI4427BDY-T1-E3 | SI4427BDY-T1-E3CT-ND | 85W3206 | 06J7713 | SI4427BDY-T1-E3 | SI4427BDY-T1-E3 | 17930-SI4427BDY-T1-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4427BDY-T1-E3 | P-Channel 30V 9.7A SOIC MOSFET Transistor | Single FETs, MOSFETs | P Channel Mosfet, -30V, 12.6A, Soic; Channel Type Vishay | P Channel Mosfet, -30V, 12.6A, Soic, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | 30V 9.7A 1.5W 10.5mΩ@10V,12.6A 1.4V@250uA P Channel SOIC-8_150mil MOSFETs ROHS |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 30 volts | 30 volts | |||||||
| IDSS | 9700 milliamps | 12600 milliamps | 12600 milliamps |
