Manufacturer: Vishay
Win Source Part Number: 894541-SI4425BDY-T1-
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 30 V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
Package: 8-SOIC (0.154", 3.90mm Width)
Package: Reel - TR
Mounting: Surface Mount
Family Name: SI4425
Categories: Discrete Semiconductor Products
Case / Package: 8-SOIC
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SI4425BDY-T1-GE3TR, SI4425BDY-T1-GE3DKR,
P-Channel 30V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
MOSFET P-CH 30V 8.8A 8SO Product overview: SI4425BDY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4425BDY-T1-GE3
MOSFET 30V 11.4A 2.5W 12mohm @ 10V
MOSFET 30V 11.4A 2.5W 12mohm @ 10V
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET P-CH 30V 8.8A 8SO
MOSFET P-CH 30V 8.8A 8SO
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 894541-SI4425BDY-T1-GE3 | SI4425BDY-T1-GE3TR-ND | 278-SI4425BDY-T1-GE3 | 880-SI4425BDY-T1-GE3 | SI4425BDY-T1-GE3 | 26R1875 | SI4425BDY-T1-GE3 | SI4425BDY-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4425BDY-T1-GE3 | Single FETs, MOSFETs | 30V 8.8A MOSFET Transistor | MOSFET 30V 11.4A 2.5W 12mohm @ 10V | MOSFET | P Channel Mosfet; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-SOIC | "8-SOIC (0.154"", 3.90mm Width)" | Tape & Reel (TR) | TO-3 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | ||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| PD | 2.5 milliwatts | 1500 milliwatts | 2500 milliwatts | 1500 milliwatts |
