P-Channel 30V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
P-Channel 30V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
MOSFET P-CH 30V 8.8A 8SO
P-CH MOSFET 30V 8.8A 12mR SOIC N Product overview: SI4425BDY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 8.8A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 8.8A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4425BDY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028481-SI4425BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 100nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 11.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
MOSFET P-CH 30V 8.8A 8SO
MOSFET, P CHANNEL, -30V, 0.01OHM, -8.8A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.8A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.5W RoHS Compliant: Yes
P CHANNEL MOSFET; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET, P CH, -30V, 0.01OHM, -8.8A, SOIC
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4425BDY-T1-E3DKR-ND | SI4425BDY-T1-E3 | 278-SI4425BDY-T1-E3 | 028481-SI4425BDY-T1-E3 | SI4425BDY-T1-E3 | 17930-SI4425BDY-T1-E3 | SI4425BDY-T1-E3 | 73W9411 | 06J7707 | 51AK9383 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 30V 8.8A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4425BDY-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | SO-8 MOSFETs ROHS | MOSFET | Mosfet, P Channel, -30V, 0.01Ohm, -8.8A, Soic-8, Full Reel; Channel Type Vishay | P Channel Mosfet; Channel Type Vishay | Mosfet, P Ch, -30V, 0.01Ohm, -8.8A, Soic Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 | TO-3 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 30 volts | 30 volts |
