P-Channel 20V 10A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
P-Channel 20V 10A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
P-Channel 20V 10A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
MOSFET P-CH 20V 10A 8SO
Manufacturer: Vishay
Win Source Part Number: 028479-SI4423DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 900mV @ 600μA
Max Gate Charge: 175nC @ 5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 14A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
P-CH MOSFET 20V 10A 7.5mR SOIC Product overview: SI4423DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4423DY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 20V 10A 8SO
MOSFET, P CHANNEL, -20V, 0.006OHM, -10A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:1.5W RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 14A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4423DY-T1-E3TR-ND | SI4423DY-T1-E3 | 028479-SI4423DY-T1-E3 | 278-SI4423DY-T1-E3 | SI4423DY-T1-E3 | SI4423DY-T1-E3 | 73W9410 | 06J7705 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4423DY-T1-E3 | 20V 10A SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P Channel, -20V, 0.006Ohm, -10A, Soic-8, Full Reel; Channel Type Vishay | P Channel Mosfet, -20V, 14A, Soic; Channel Type Vishay |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 20 volts | 20 volts |
