Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4410BDY-T1-GE3

Description
N-Channel 30V 7.5A (Ta) 1.4W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
N-Channel 30V 7.5A (Ta) 1.4W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4410BDY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4410BDY-T1-GE3TR-ND
Single FETs, MOSFETs SI4410BDY-T1-GE3TR-ND
N-Channel 30V 7.5A (Ta) 1.4W (Ta) Surface Mount 8-SOIC

N-Channel 30V 7.5A (Ta) 1.4W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4410BDY-T1-GE3 - 093012-SI4410BDY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4410BDY-T1-GE3
093012-SI4410BDY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4410BDY-T1-GE3 093012-SI4410BDY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 093012-SI4410BDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 093012-SI4410BDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI4410BDY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4410BDY-T1-GE3
Single FETs, MOSFETs SI4410BDY-T1-GE3
MOSFET N-CH 30V 7.5A 8SO

MOSFET N-CH 30V 7.5A 8SO

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4410BDY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4410BDY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4410BDY-T1-GE3
MOSFET N-CH 30V 7.5A 8SO

MOSFET N-CH 30V 7.5A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4410BDY-T1-GE3TR-ND 093012-SI4410BDY-T1-GE3 SI4410BDY-T1-GE3 SI4410BDY-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4410BDY-T1-GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 30 volts 30 volts
PD 1400 milliwatts 1400 milliwatts
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