MOSFET N-CH 30V 7.5A 8SO
N-Channel 30V 7.5A (Ta) 1.4W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 30V 7.5A 8SO Product overview: SI4410BDY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4410BDY-T1-E3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028474-SI4410BDY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 30V, 0.014OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; No. of Pins:8PinsRoHS Compliant: Yes
MOSFET N-CH 30V 7.5A 8SO
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Radwell International | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4410BDY-T1-E3 | SI4410BDY-T1-E3TR-ND | 278-SI4410BDY-T1-E3 | 028474-SI4410BDY-T1-E3 | SI4410BDY-T1-E3 | 22252062 | 35K3458 | SI4410BDY-T1-E3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 30V 7.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4410BDY-T1-E3 | MOSFET | Transistor | N Channel Mosfet, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| IDSS | 7500 milliamps | 10000 milliamps |
