Vishay Precision Group Single FETs, MOSFETs SI4410BDY-T1-E3

Description
MOSFET N-CH 30V 7.5A 8SO
Request a Quote Datasheet
Description
MOSFET N-CH 30V 7.5A 8SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4410BDY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4410BDY-T1-E3
Single FETs, MOSFETs SI4410BDY-T1-E3
MOSFET N-CH 30V 7.5A 8SO

MOSFET N-CH 30V 7.5A 8SO

Supplier's Site Datasheet
Single FETs, MOSFETs - SI4410BDY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4410BDY-T1-E3TR-ND
Single FETs, MOSFETs SI4410BDY-T1-E3TR-ND
N-Channel 30V 7.5A (Ta) 1.4W (Ta) Surface Mount 8-SOIC

N-Channel 30V 7.5A (Ta) 1.4W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
30V 7.5A MOSFET Transistor
278-SI4410BDY-T1-E3
30V 7.5A MOSFET Transistor 278-SI4410BDY-T1-E3
MOSFET N-CH 30V 7.5A 8SO Product overview: SI4410BDY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4410BDY-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 7.5A 8SO Product overview: SI4410BDY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4410BDY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4410BDY-T1-E3 - 028474-SI4410BDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4410BDY-T1-E3
028474-SI4410BDY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4410BDY-T1-E3 028474-SI4410BDY-T1-E3
Manufacturer: Vishay Win Source Part Number: 028474-SI4410BDY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.4W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.5A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028474-SI4410BDY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.5A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.5 mOhm @ 10A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3

MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3

Buy Now Datasheet
Transistor - 22252062 - Radwell International
Willingboro, NJ, United States
Transistor
22252062
Transistor 22252062
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 30V, 0.014OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 30V, 0.014OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
N Channel Mosfet, Full Reel; Channel Type Vishay - 35K3458 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, Full Reel; Channel Type Vishay
35K3458
N Channel Mosfet, Full Reel; Channel Type Vishay 35K3458
N CHANNEL MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; No. of Pins:8PinsRoHS Compliant: Yes

N CHANNEL MOSFET, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; No. of Pins:8PinsRoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4410BDY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4410BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4410BDY-T1-E3
MOSFET N-CH 30V 7.5A 8SO

MOSFET N-CH 30V 7.5A 8SO

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Radwell International Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4410BDY-T1-E3 SI4410BDY-T1-E3TR-ND 278-SI4410BDY-T1-E3 028474-SI4410BDY-T1-E3 SI4410BDY-T1-E3 22252062 35K3458 SI4410BDY-T1-E3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs 30V 7.5A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4410BDY-T1-E3 MOSFET Transistor N Channel Mosfet, Full Reel; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 7500 milliamps 10000 milliamps
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