Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4409DY-T1-E3 SI4409DY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1095927-SI4409DY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 1.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 332pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 1095927-SI4409DY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 1.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 332pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4409DY-T1-E3 - 1095927-SI4409DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4409DY-T1-E3
1095927-SI4409DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4409DY-T1-E3 1095927-SI4409DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 1095927-SI4409DY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 1.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 332pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1095927-SI4409DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 1.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 332pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI4409DY-T1-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4409DY-T1-E3-ND
Single FETs, MOSFETs SI4409DY-T1-E3-ND
P-Channel 150V 1.3A (Tc) 2.2W (Ta), 4.6W (Tc) Surface Mount 8-SOIC

P-Channel 150V 1.3A (Tc) 2.2W (Ta), 4.6W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4409DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4409DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4409DY-T1-E3
MOSFET P-CH 150V 1.3A 8SO

MOSFET P-CH 150V 1.3A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1095927-SI4409DY-T1-E3 SI4409DY-T1-E3-ND SI4409DY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4409DY-T1-E3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 150 volts
PD 2200 to 4600 milliwatts
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