Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4409DY-T1-E3

Description
P-Channel 150V 1.3A (Tc) 2.2W (Ta), 4.6W (Tc) Surface Mount 8-SOIC
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Description
P-Channel 150V 1.3A (Tc) 2.2W (Ta), 4.6W (Tc) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4409DY-T1-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4409DY-T1-E3-ND
Single FETs, MOSFETs SI4409DY-T1-E3-ND
P-Channel 150V 1.3A (Tc) 2.2W (Ta), 4.6W (Tc) Surface Mount 8-SOIC

P-Channel 150V 1.3A (Tc) 2.2W (Ta), 4.6W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
150V 1.3A MOSFET Transistor
278-SI4409DY-T1-E3
150V 1.3A MOSFET Transistor 278-SI4409DY-T1-E3
MOSFET P-CH 150V 1.3A 8SO Product overview: SI4409DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 1.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4409DY-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 150V 1.3A 8SO Product overview: SI4409DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 1.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 1.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4409DY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4409DY-T1-E3 - 1095927-SI4409DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4409DY-T1-E3
1095927-SI4409DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4409DY-T1-E3 1095927-SI4409DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 1095927-SI4409DY-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 1.3A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 332pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1095927-SI4409DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 1.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 332pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4409DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4409DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4409DY-T1-E3
MOSFET P-CH 150V 1.3A 8SO

MOSFET P-CH 150V 1.3A 8SO

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4409DY-T1-E3-ND 278-SI4409DY-T1-E3 1095927-SI4409DY-T1-E3 SI4409DY-T1-E3
Product Name Single FETs, MOSFETs 150V 1.3A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4409DY-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" Tape & Reel (TR) SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width)
PD 2200 milliwatts 2200 to 4600 milliwatts
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7 suppliers