Vishay Precision Group Single FETs, MOSFETs SI4408DY-T1-E3

N-Channel 20V 14A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

N-Channel 20V 14A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

N-Channel 20V 14A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

20V 14A N-CH MOSFET SOIC N 4.5mR Product overview: SI4408DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 14A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 14A, SOIC, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4408DY-T1-E3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 028473-SI4408DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Family Name: Si4408DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 14A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 32nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 21A, 10V
Alternative Parts (Cross-Reference): SI4114DY-T1-GE3; Si4114DY-T1-E3; IRF7456; IRF7456PbF-1;
Introduction Date: October 17, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited