Vishay Intertechnology, Inc. MOSFET Si4401FDY-T1-GE3

Description
MOSFET -40V Vds 20V Vgs SO-8
Description
MOSFET -40V Vds 20V Vgs SO-8
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P-Channel MOSFET with a 40 V drain-source voltage rating and SO-8 package, designed for adapter, load, and battery switching applications. The device has a maximum on-resistance of 0.0183 Ω at -4.5 V gate-source voltage and 0.0142 Ω at -10 V gate-source voltage, with a continuous drain current of -14 A at 25 °C. It features a total gate charge of 31 nC and is rated for operation from -55 °C to +150 °C. The part is lead-free, halogen-free, and certified to RoHS standards.

Datasheet Summary
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P-Channel MOSFET with a 40 V drain-source voltage rating and SO-8 package, designed for adapter, load, and battery switching applications. The device has a maximum on-resistance of 0.0183 Ω at -4.5 V gate-source voltage and 0.0142 Ω at -10 V gate-source voltage, with a continuous drain current of -14 A at 25 °C. It features a total gate charge of 31 nC and is rated for operation from -55 °C to +150 °C. The part is lead-free, halogen-free, and certified to RoHS standards.

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MOSFET -40V Vds 20V Vgs SO-8

MOSFET -40V Vds 20V Vgs SO-8

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number Si4401FDY-T1-GE3
Product Name MOSFET
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