Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4401DY-T1-E3

Description
P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4401DY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4401DY-T1-E3TR-ND
Single FETs, MOSFETs SI4401DY-T1-E3TR-ND
P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4401DY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4401DY-T1-E3
Single FETs, MOSFETs SI4401DY-T1-E3
MOSFET P-CH 40V 8.7A 8SO

MOSFET P-CH 40V 8.7A 8SO

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DY-T1-E3 - 120981-SI4401DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DY-T1-E3
120981-SI4401DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DY-T1-E3 120981-SI4401DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 120981-SI4401DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 8.7A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 50nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15.5 mOhm @ 10.5A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 120981-SI4401DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 8.7A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 50nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15.5 mOhm @ 10.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
40V 8.7A MOSFET Transistor
278-SI4401DY-T1-E3
40V 8.7A MOSFET Transistor 278-SI4401DY-T1-E3
MOSFET P-CH 40V 8.7A 8SO Product overview: SI4401DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 8.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 8.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4401DY-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 40V 8.7A 8SO Product overview: SI4401DY-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 8.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 8.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4401DY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4401DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4401DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4401DY-T1-E3
MOSFET P-CH 40V 8.7A 8SO

MOSFET P-CH 40V 8.7A 8SO

Supplier's Site
MOSFET 40V 10.5A 3W - 880-SI4401DY-T1-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 40V 10.5A 3W
880-SI4401DY-T1-E3
MOSFET 40V 10.5A 3W 880-SI4401DY-T1-E3
MOSFET 40V 10.5A 3W

MOSFET 40V 10.5A 3W

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4401DY-T1-E3TR-ND SI4401DY-T1-E3 120981-SI4401DY-T1-E3 278-SI4401DY-T1-E3 SI4401DY-T1-E3 880-SI4401DY-T1-E3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DY-T1-E3 40V 8.7A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET 40V 10.5A 3W
Polarity P-Channel P-Channel; P-Channel P-Channel; P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) SOT3; 8-SO Tape & Reel (TR) 50 nC @ 5 V
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 40 volts 40 volts 40 volts
IDSS 8700 milliamps
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