Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4401DY-T1-E3

Description
MOSFET P-CH 40V 8.7A 8SO
Request a Quote Datasheet
Description
MOSFET P-CH 40V 8.7A 8SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4401DY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4401DY-T1-E3
Single FETs, MOSFETs SI4401DY-T1-E3
MOSFET P-CH 40V 8.7A 8SO

MOSFET P-CH 40V 8.7A 8SO

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DY-T1-E3 - 120981-SI4401DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DY-T1-E3
120981-SI4401DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DY-T1-E3 120981-SI4401DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 120981-SI4401DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 8.7A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 50nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15.5 mOhm @ 10.5A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 120981-SI4401DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 8.7A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 50nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15.5 mOhm @ 10.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI4401DY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4401DY-T1-E3TR-ND
Single FETs, MOSFETs SI4401DY-T1-E3TR-ND
P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
MOSFET 40V 10.5A 3W - 880-SI4401DY-T1-E3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 40V 10.5A 3W
880-SI4401DY-T1-E3
MOSFET 40V 10.5A 3W 880-SI4401DY-T1-E3
MOSFET 40V 10.5A 3W

MOSFET 40V 10.5A 3W

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4401DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4401DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4401DY-T1-E3
MOSFET P-CH 40V 8.7A 8SO

MOSFET P-CH 40V 8.7A 8SO

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4401DY-T1-E3 120981-SI4401DY-T1-E3 SI4401DY-T1-E3TR-ND 880-SI4401DY-T1-E3 SI4401DY-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DY-T1-E3 Single FETs, MOSFETs MOSFET 40V 10.5A 3W Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 40 volts 40 volts 40 volts
IDSS 8700 milliamps
PD 1500 milliwatts 1500 milliwatts 1500 milliwatts
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