Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DDY SI4401DDY

Description
Manufacturer: Vishay Win Source Part Number: 321751-SI4401DDY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 16.1A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 3007pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 10.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 321751-SI4401DDY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 16.1A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 3007pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 10.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DDY - 321751-SI4401DDY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DDY
321751-SI4401DDY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DDY 321751-SI4401DDY
Manufacturer: Vishay Win Source Part Number: 321751-SI4401DDY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 16.1A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 3007pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 10.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 321751-SI4401DDY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 16.1A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 3007pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 10.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 321751-SI4401DDY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DDY
Polarity P-Channel; P-Channel
V(BR)DSS 40 volts
PD 2500 to 6300 milliwatts
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