Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DDY-T1-GE3 SI4401DDY-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 092147-SI4401DDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Family Name: Si4401DDY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 16.1A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 3007pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 10.2A, 10V Alternative Parts (Cross-Reference): IRF7240; IRF7240TR; IRF7240PBF; TPC8133,LQ(S; Introduction Date: November 21, 2011 ECCN: EAR99 Country of Origin: China, Israel Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 092147-SI4401DDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Family Name: Si4401DDY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 16.1A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 3007pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 10.2A, 10V Alternative Parts (Cross-Reference): IRF7240; IRF7240TR; IRF7240PBF; TPC8133,LQ(S; Introduction Date: November 21, 2011 ECCN: EAR99 Country of Origin: China, Israel Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DDY-T1-GE3 - 092147-SI4401DDY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DDY-T1-GE3
092147-SI4401DDY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DDY-T1-GE3 092147-SI4401DDY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 092147-SI4401DDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Family Name: Si4401DDY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 16.1A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 95nC @ 10V Max Input Capacitance: 3007pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 10.2A, 10V Alternative Parts (Cross-Reference): IRF7240; IRF7240TR; IRF7240PBF; TPC8133,LQ(S; Introduction Date: November 21, 2011 ECCN: EAR99 Country of Origin: China, Israel Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 092147-SI4401DDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Family Name: Si4401DDY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 16.1A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 3007pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 10.2A, 10V
Alternative Parts (Cross-Reference): IRF7240; IRF7240TR; IRF7240PBF; TPC8133,LQ(S;
Introduction Date: November 21, 2011
ECCN: EAR99
Country of Origin: China, Israel
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
-40V -16.1A SOIC MOSFET Transistor
278-SI4401DDY-T1-GE3
-40V -16.1A SOIC MOSFET Transistor 278-SI4401DDY-T1-GE3
P-CH MOSFET, -40V, -16.1A, 15mR Rds On, SOIC Product overview: SI4401DDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -40V, -16.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -40V, -16.1A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4401DDY-T1-GE3 can be used for catalog matching and distributor lookup.

P-CH MOSFET, -40V, -16.1A, 15mR Rds On, SOIC Product overview: SI4401DDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -40V, -16.1A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -40V, -16.1A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4401DDY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI4401DDY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4401DDY-T1-GE3DKR-ND
Single FETs, MOSFETs SI4401DDY-T1-GE3DKR-ND
P-Channel 40V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 8-SOIC

P-Channel 40V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4401DDY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4401DDY-T1-GE3CT-ND
Single FETs, MOSFETs SI4401DDY-T1-GE3CT-ND
P-Channel 40V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 8-SOIC

P-Channel 40V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4401DDY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4401DDY-T1-GE3TR-ND
Single FETs, MOSFETs SI4401DDY-T1-GE3TR-ND
P-Channel 40V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 8-SOIC

P-Channel 40V 16.1A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Mosfet Transistor, P Channel, -16.1 A, -40 V, 0.018 Ohm, -4.5 V, -1.2 V Rohs Compliant Vishay - 97W2651 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, P Channel, -16.1 A, -40 V, 0.018 Ohm, -4.5 V, -1.2 V Rohs Compliant Vishay
97W2651
Mosfet Transistor, P Channel, -16.1 A, -40 V, 0.018 Ohm, -4.5 V, -1.2 V Rohs Compliant Vishay 97W2651
MOSFET Transistor, P Channel, -16.1 A, -40 V, 0.018 ohm, -4.5 V, -1.2 V RoHS Compliant: Yes

MOSFET Transistor, P Channel, -16.1 A, -40 V, 0.018 ohm, -4.5 V, -1.2 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Channel, -40V, -16.1A, Soic-8, Full Reel; Channel Type Vishay - 86R3886 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -40V, -16.1A, Soic-8, Full Reel; Channel Type Vishay
86R3886
Mosfet, P Channel, -40V, -16.1A, Soic-8, Full Reel; Channel Type Vishay 86R3886
MOSFET, P CHANNEL, -40V, -16.1A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:16.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:6.3W RoHS Compliant: Yes

MOSFET, P CHANNEL, -40V, -16.1A, SOIC-8, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:16.1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:6.3W RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4401DDY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4401DDY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4401DDY-T1-GE3
MOSFET P-CH 40V 16.1A 8SO

MOSFET P-CH 40V 16.1A 8SO

Supplier's Site
Single FETs, MOSFETs - SI4401DDY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4401DDY-T1-GE3
Single FETs, MOSFETs SI4401DDY-T1-GE3
MOSFET P-CH 40V 16.1A 8SO

MOSFET P-CH 40V 16.1A 8SO

Supplier's Site Datasheet
MOSFET -40V Vds 20V Vgs SO-8

MOSFET -40V Vds 20V Vgs SO-8

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI4401DDY-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI4401DDY-T1-GE3
40V 16.1A 15mΩ@10V,10.2A 2.5V@250uA P Channel SOIC-8 MOSFETs ROHS

40V 16.1A 15mΩ@10V,10.2A 2.5V@250uA P Channel SOIC-8 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 092147-SI4401DDY-T1-GE3 278-SI4401DDY-T1-GE3 SI4401DDY-T1-GE3DKR-ND 97W2651 86R3886 SI4401DDY-T1-GE3 SI4401DDY-T1-GE3 SI4401DDY-T1-GE3 SI4401DDY-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401DDY-T1-GE3 -40V -16.1A SOIC MOSFET Transistor Single FETs, MOSFETs Mosfet Transistor, P Channel, -16.1 A, -40 V, 0.018 Ohm, -4.5 V, -1.2 V Rohs Compliant Vishay Mosfet, P Channel, -40V, -16.1A, Soic-8, Full Reel; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 40 volts 40 volts 40 volts
PD 2500 to 6300 milliwatts 6300 milliwatts 6300 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)" TO-3 TO-3 Surface Mount 8-SOIC (0.154", 3.90mm Width)
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