Vishay Precision Group Single FETs, MOSFETs SI4401BDY-T1-GE3

Description
P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - SI4401BDY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4401BDY-T1-GE3TR-ND
Single FETs, MOSFETs SI4401BDY-T1-GE3TR-ND
P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4401BDY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4401BDY-T1-GE3DKR-ND
Single FETs, MOSFETs SI4401BDY-T1-GE3DKR-ND
P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

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Single FETs, MOSFETs - SI4401BDY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4401BDY-T1-GE3CT-ND
Single FETs, MOSFETs SI4401BDY-T1-GE3CT-ND
P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401BDY-T1-GE3 - 093070-SI4401BDY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401BDY-T1-GE3
093070-SI4401BDY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401BDY-T1-GE3 093070-SI4401BDY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 093070-SI4401BDY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 8.7A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 55nC @ 5V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 10.5A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 093070-SI4401BDY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 8.7A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 55nC @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 10.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
P-Channel 40V 8.7A MOSFET Transistor
278-SI4401BDY-T1-GE3
P-Channel 40V 8.7A MOSFET Transistor 278-SI4401BDY-T1-GE3
P-Channel JFET, 40V, 8.7A ID, 14mR Rds On, SO Package Product overview: SI4401BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 40V, 8.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 8.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4401BDY-T1-GE3 can be used for catalog matching and distributor lookup.

P-Channel JFET, 40V, 8.7A ID, 14mR Rds On, SO Package Product overview: SI4401BDY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 40V, 8.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 8.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4401BDY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4401BDY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4401BDY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4401BDY-T1-GE3
MOSFET P-CH 40V 8.7A 8SO

MOSFET P-CH 40V 8.7A 8SO

Supplier's Site
Single FETs, MOSFETs - SI4401BDY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4401BDY-T1-GE3
Single FETs, MOSFETs SI4401BDY-T1-GE3
MOSFET P-CH 40V 8.7A 8SO

MOSFET P-CH 40V 8.7A 8SO

Supplier's Site Datasheet
P Channel Mosfet, -40V, 10.5A, Soic, Full Reel; Channel Type Vishay - 16P3734 - Newark, An Avnet Company
Chicago, IL, United States
P Channel Mosfet, -40V, 10.5A, Soic, Full Reel; Channel Type Vishay
16P3734
P Channel Mosfet, -40V, 10.5A, Soic, Full Reel; Channel Type Vishay 16P3734
P CHANNEL MOSFET, -40V, 10.5A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:1.5W RoHS Compliant: Yes

P CHANNEL MOSFET, -40V, 10.5A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:1.5W RoHS Compliant: Yes

Supplier's Site
Mosfet, P Channel, -40V, -8.7A, Soic-8; Channel Type Vishay - 69W7197 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -40V, -8.7A, Soic-8; Channel Type Vishay
69W7197
Mosfet, P Channel, -40V, -8.7A, Soic-8; Channel Type Vishay 69W7197
MOSFET, P CHANNEL, -40V, -8.7A, SOIC-8; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, P CHANNEL, -40V, -8.7A, SOIC-8; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:8.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P Ch, -40V, -8.7A, Soic Vishay - 51AK9382 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Ch, -40V, -8.7A, Soic Vishay
51AK9382
Mosfet, P Ch, -40V, -8.7A, Soic Vishay 51AK9382
MOSFET, P CH, -40V, -8.7A, SOIC

MOSFET, P CH, -40V, -8.7A, SOIC

Supplier's Site
MOSFET 40V 10.5A 2.9W 14mohm @ 10V

MOSFET 40V 10.5A 2.9W 14mohm @ 10V

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI4401BDY-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI4401BDY-T1-GE3
40V 8.7A 1.5W 14mΩ@10V,10.5A 3V@250uA P Channel SOIC-8 MOSFETs ROHS

40V 8.7A 1.5W 14mΩ@10V,10.5A 3V@250uA P Channel SOIC-8 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4401BDY-T1-GE3TR-ND 093070-SI4401BDY-T1-GE3 278-SI4401BDY-T1-GE3 SI4401BDY-T1-GE3 SI4401BDY-T1-GE3 16P3734 69W7197 51AK9382 SI4401BDY-T1-GE3 SI4401BDY-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4401BDY-T1-GE3 P-Channel 40V 8.7A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs P Channel Mosfet, -40V, 10.5A, Soic, Full Reel; Channel Type Vishay Mosfet, P Channel, -40V, -8.7A, Soic-8; Channel Type Vishay Mosfet, P Ch, -40V, -8.7A, Soic Vishay MOSFET Triode/MOS Tube/Transistor >> MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel P-Channel P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) TO-3 TO-3 TO-3
V(BR)DSS 40 volts 40 volts 40 volts
PD 1500 milliwatts 1500 milliwatts 1500 milliwatts 1500 milliwatts 1500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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