Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4396DY-T1-GE3 SI4396DY-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1095925-SI4396DY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 5.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 2.6V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1675pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1095925-SI4396DY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 5.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 2.6V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1675pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4396DY-T1-GE3 - 1095925-SI4396DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4396DY-T1-GE3
1095925-SI4396DY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4396DY-T1-GE3 1095925-SI4396DY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095925-SI4396DY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.1W (Ta), 5.4W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Tc) Gate-Source Threshold Voltage: 2.6V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 1675pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11.5 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1095925-SI4396DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 5.4W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 2.6V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1675pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11.5 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
30V 16A MOSFET Transistor
278-SI4396DY-T1-GE3
30V 16A MOSFET Transistor 278-SI4396DY-T1-GE3
MOSFET N-CH 30V 16A 8SO Product overview: SI4396DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4396DY-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 16A 8SO Product overview: SI4396DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4396DY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - SI4396DY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4396DY-T1-GE3TR-ND
Single FETs, MOSFETs SI4396DY-T1-GE3TR-ND
N-Channel 30V 16A (Tc) 3.1W (Ta), 5.4W (Tc) Surface Mount 8-SOIC

N-Channel 30V 16A (Tc) 3.1W (Ta), 5.4W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4396DY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4396DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4396DY-T1-GE3
MOSFET N-CH 30V 16A 8SO

MOSFET N-CH 30V 16A 8SO

Supplier's Site
MOSFET 30V 16A 5.4W 11.5mohm @ 10V - 880-SI4396DY-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 30V 16A 5.4W 11.5mohm @ 10V
880-SI4396DY-T1-GE3
MOSFET 30V 16A 5.4W 11.5mohm @ 10V 880-SI4396DY-T1-GE3
MOSFET 30V 16A 5.4W 11.5mohm @ 10V

MOSFET 30V 16A 5.4W 11.5mohm @ 10V

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1095925-SI4396DY-T1-GE3 278-SI4396DY-T1-GE3 SI4396DY-T1-GE3TR-ND SI4396DY-T1-GE3 880-SI4396DY-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4396DY-T1-GE3 30V 16A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET 30V 16A 5.4W 11.5mohm @ 10V
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 3100 to 5400 milliwatts 3100 milliwatts 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO Tape & Reel (TR) "8-SOIC (0.154"", 3.90mm Width)" Surface Mount
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