Vishay Intertechnology, Inc. MOSFET SI4392ADY-T1-E3

Description
MOSFET 30V 21.5A 6.25W
Description
MOSFET 30V 21.5A 6.25W
Datasheet
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Si4392ADY-T1-E3 is an N-channel MOSFET designed for high-side DC/DC conversion in notebook and server applications, housed in an SO-8 package. It has a drain-source voltage rating of 30 V, a continuous drain current of 21.5 A at T_C = 25 °C, and a drain-source on-state resistance of 0.0075 Ω at V_GS = 10 V. The device features a low total gate charge of 12 nC for reduced switching losses and operates with a junction temperature range of -55 °C to 150 °C. It meets RoHS Directive 2002/95/EC compliance.

Datasheet Summary
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Si4392ADY-T1-E3 is an N-channel MOSFET designed for high-side DC/DC conversion in notebook and server applications, housed in an SO-8 package. It has a drain-source voltage rating of 30 V, a continuous drain current of 21.5 A at T_C = 25 °C, and a drain-source on-state resistance of 0.0075 Ω at V_GS = 10 V. The device features a low total gate charge of 12 nC for reduced switching losses and operates with a junction temperature range of -55 °C to 150 °C. It meets RoHS Directive 2002/95/EC compliance.

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Sheung Wan, Hong Kong
MOSFET 30V 21.5A 6.25W

MOSFET 30V 21.5A 6.25W

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI4392ADY-T1-E3
Product Name MOSFET
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