Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4378DY-T1-GE3

N-Channel 20V 19A (Ta) 1.6W (Ta) Surface Mount 8-SOIC

MOSFET N-CH 20V 19A 8SO Product overview: SI4378DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4378DY-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 794250-SI4378DY-T1-GE3
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Family Name: Si4378DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Manufacturer Package: 8-SO
Channel Type Type: N
Drain Source Voltage: 20V
Vgs(th) (Maximum) @ Id: 1.8V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 55nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 8500pF @ 10V
Vgs (Maximum): ±12V
Power Dissipation (Maximum): 1.6W (Ta)
Rds On (Maximum) @ Id, Vgs: 2.7 mOhm @ 25A, 4.5V
Alternative Parts (Cross-Reference): IRF6201TRPbF; IRF6201PbF; Si4186DY-T1-GE3;
Introduction Date: April 29, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited