N-Channel 20V 19A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028468-SI4378DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 19A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 55nC @ 4.5V
Max Input Capacitance: 8500pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 2.7 mOhm @ 25A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
MOSFET N-CH 20V 19A 8SO
Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:19A; On Resistance Rds(on):0.0022ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:600mV RoHS Compliant: Yes
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors |
| Product Number | SI4378DY-T1-E3TR-ND | 028468-SI4378DY-T1-E3 | SI4378DY-T1-E3 | 85W2144 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4378DY-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154, 3.90mm Width) | TO-3 |
| V(BR)DSS | 20 volts | |||
| PD | 1600 milliwatts |
