Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4346DY-T1-E3 SI4346DY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028467-SI4346DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.31W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.9A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 10nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 23 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 028467-SI4346DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.31W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.9A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 10nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 23 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4346DY-T1-E3 - 028467-SI4346DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4346DY-T1-E3
028467-SI4346DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4346DY-T1-E3 028467-SI4346DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 028467-SI4346DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.31W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.9A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 10nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 23 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 028467-SI4346DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.31W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.9A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 10nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 23 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI4346DY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4346DY-T1-E3CT-ND
Single FETs, MOSFETs SI4346DY-T1-E3CT-ND
N-Channel 30V 5.9A (Ta) 1.31W (Ta) Surface Mount 8-SOIC

N-Channel 30V 5.9A (Ta) 1.31W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4346DY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4346DY-T1-E3TR-ND
Single FETs, MOSFETs SI4346DY-T1-E3TR-ND
N-Channel 30V 5.9A (Ta) 1.31W (Ta) Surface Mount 8-SOIC

N-Channel 30V 5.9A (Ta) 1.31W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
30V 5.9A SOIC MOSFET Transistor
278-SI4346DY-T1-E3
30V 5.9A SOIC MOSFET Transistor 278-SI4346DY-T1-E3
N-CH MOSFET 30V 5.9A 23mR SOIC Product overview: SI4346DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4346DY-T1-E3 can be used for catalog matching and distributor lookup.

N-CH MOSFET 30V 5.9A 23mR SOIC Product overview: SI4346DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4346DY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4346DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4346DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4346DY-T1-E3
MOSFET N-CH 30V 5.9A 8SO

MOSFET N-CH 30V 5.9A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028467-SI4346DY-T1-E3 SI4346DY-T1-E3CT-ND 278-SI4346DY-T1-E3 SI4346DY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4346DY-T1-E3 Single FETs, MOSFETs 30V 5.9A SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 1310 milliwatts 1310 milliwatts
Unlock Full Specs
to access all available technical data