Vishay Intertechnology, Inc. FET, MOSFET Arrays SI4330DY-T1-E3

Description
Mosfet Array 2 N-Channel (Dual) 30V 6.6A 1.1W Surface Mount 8-SOIC
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 30V 6.6A 1.1W Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI4330DY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4330DY-T1-E3TR-ND
FET, MOSFET Arrays SI4330DY-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 30V 6.6A 1.1W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 6.6A 1.1W Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4330DY-T1-E3 - 138171-SI4330DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4330DY-T1-E3
138171-SI4330DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4330DY-T1-E3 138171-SI4330DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 138171-SI4330DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.6A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20nC @ 4.5V Maximum Rds On at Id,Vgs: 16.5 mOhm @ 8.7A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 138171-SI4330DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 4.5V
Maximum Rds On at Id,Vgs: 16.5 mOhm @ 8.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
30V 6.6A SOIC MOSFET Transistor
278-SI4330DY-T1-E3
30V 6.6A SOIC MOSFET Transistor 278-SI4330DY-T1-E3
30V 6.6A 16.5mR N-CH MOSFET SOIC Product overview: SI4330DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4330DY-T1-E3 can be used for catalog matching and distributor lookup.

30V 6.6A 16.5mR N-CH MOSFET SOIC Product overview: SI4330DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 6.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 6.6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4330DY-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4330DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4330DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4330DY-T1-E3
MOSFET 2N-CH 30V 6.6A 8SOIC

MOSFET 2N-CH 30V 6.6A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4330DY-T1-E3TR-ND 138171-SI4330DY-T1-E3 278-SI4330DY-T1-E3 SI4330DY-T1-E3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4330DY-T1-E3 30V 6.6A SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO
Polarity N-Channel N-Channel
V(BR)DSS 30 volts
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