Mosfet Array 2 N-Channel (Dual) 30V 6.6A 1.1W Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 138171-SI4330DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.6A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20nC @ 4.5V
Maximum Rds On at Id,Vgs: 16.5 mOhm @ 8.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 30V 6.6A 8SOIC
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4330DY-T1-E3TR-ND | 138171-SI4330DY-T1-E3 | SI4330DY-T1-E3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4330DY-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | |
| Polarity | N-Channel | ||
| V(BR)DSS | 30 volts |
