Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays SI4310BDY-T1-E3

Description
Win Source Part Number: 1278475-SI4310BDY-T1 -E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A, 9.8A Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power - Max: 1.14W, 1.47W Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SI4310 Product Status: Obsolete
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Description
Win Source Part Number: 1278475-SI4310BDY-T1 -E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A, 9.8A Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power - Max: 1.14W, 1.47W Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SI4310 Product Status: Obsolete
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1278475-SI4310BDY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1278475-SI4310BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1278475-SI4310BDY-T1-E3
Win Source Part Number: 1278475-SI4310BDY-T1 -E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: TrenchFET® Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A, 9.8A Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power - Max: 1.14W, 1.47W Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SI4310 Product Status: Obsolete

Win Source Part Number: 1278475-SI4310BDY-T1-E3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: TrenchFET®
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A, 9.8A
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power - Max: 1.14W, 1.47W
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SI4310
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4310BDY-T1-E3 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4310BDY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4310BDY-T1-E3
MOSFET 2N-CH 30V 7.5A 14SOIC

MOSFET 2N-CH 30V 7.5A 14SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors RF Transistors
Product Number 1278475-SI4310BDY-T1-E3 SI4310BDY-T1-E3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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