N-Channel JFET, 40V, 9.2A ID, 20mR Rds On, SO-8 Product overview: SI4288DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 9.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 9.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4288DY-T1-GE3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 40V 9.2A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 40V 9.2A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 40V 9.2A 3.1W Surface Mount 8-SOIC
MOSFET 2N-CH 40V 9.2A 8SO
Manufacturer: Vishay
Win Source Part Number: 1095914-SI4288DY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 9.2A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 580pF @ 20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 40V 9.2A 8SOIC
MOSFET, DUAL N-CH, 40V, 9.2A, 150DEG C; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:9.2A; On Resistance Rds(on):0.0165ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET, NN CHANNEL, W/D, 40V, 9.2A, SO8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V RoHS Compliant: Yes
(PRICE/TC) MOSFET, DUAL N-CH, 40V, 9.2A, 150DEG C; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:40V; CONTINUOUS DRAIN CURRENT ID:9.2A; ON RESISTANCE RDS(ON):0.0165OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIA. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI4288DY-T1-GE3 | SI4288DY-T1-GE3DKR-ND | SI4288DY-T1-GE3 | 1095914-SI4288DY-T1-GE3 | SI4288DY-T1-GE3 | 70AC6505 | 64T4063 | SI4288DY-T1-GE3 | 39136125 |
| Product Name | N-Channel 40V 9.2A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4288DY-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 40V, 9.2A, 150Deg C; Transistor Polarity Vishay | Mosfet, Nn Channel, W/d, 40V, 9.2A, So8; Transistor Polarity Vishay | MOSFET | Transistor |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||||
| PD | 3100 milliwatts | 3100 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | TO-3 | TO-3 | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
