Vishay Precision Group FET, MOSFET Arrays SI4286DY-T1-GE3

Mosfet Array 2 N-Channel (Dual) 40V 7A 2.9W Surface Mount 8-SOIC

MOSFET 2N-CH 40V 7A 8SOIC Product overview: SI4286DY-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI4286DY-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 1249016-SI4286DY-T1-GE3
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 7A
Power - Max: 2.9W
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.vishay.com
Manufacturer Package: 8-SO
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 375pF @ 20V
Rds On (Maximum) @ Id, Vgs: 32.5 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): NVMD6N04R2G; NTMD6N04R2G; DMN4034SSD;
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited