N-Channel JFET, 25V, 8A ID, 18mR Rds On, SOP-8 Product overview: SI4228DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 25V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4228DY-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 25V 8A 8-SOIC
Mosfet Array 2 N-Channel (Dual) 25V 8A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 25V 8A 3.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 25V 8A 3.1W Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 1095910-SI4228DY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.1W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 790pF @ 12.5V
Maximum Rds On at Id,Vgs: 18 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 25V 8A 8SOIC
MOSFET, DUAL N-CH, 25V, 8A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.015ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET, DUAL N CHANNEL, 25V, 8A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:8A; On Resistance Rds(on):0.015ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4228DY-T1-GE3 | SI4228DY-T1-GE3 | SI4228DY-T1-GE3CT-ND | 1095910-SI4228DY-T1-GE3 | SI4228DY-T1-GE3 | SI4228DY-T1-GE3 | 86R3884 | 04X9760 |
| Product Name | N-Channel 25V 8A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4228DY-T1-GE3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 25V, 8A, Soic-8; Transistor Polarity Vishay | Mosfet, Dual N Channel, 25V, 8A, Soic-8; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||||
| PD | 3100 milliwatts | 3100 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 25 volts | 25 volts |
