Vishay Intertechnology, Inc. FET, MOSFET Arrays SI4226DY-T1-GE3

Description
Mosfet Array 2 N-Channel (Dual) 25V 8A 3.2W Surface Mount 8-SOIC
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Description
Mosfet Array 2 N-Channel (Dual) 25V 8A 3.2W Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

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FET, MOSFET Arrays - SI4226DY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4226DY-T1-GE3TR-ND
FET, MOSFET Arrays SI4226DY-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 25V 8A 3.2W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 25V 8A 3.2W Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4226DY-T1-GE3 - 1095909-SI4226DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4226DY-T1-GE3
1095909-SI4226DY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4226DY-T1-GE3 1095909-SI4226DY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095909-SI4226DY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 3.2W Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 8A Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1255pF @ 15V Maximum Rds On at Id,Vgs: 19.5 mOhm @ 7A, 4.5V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1095909-SI4226DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.2W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 8A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1255pF @ 15V
Maximum Rds On at Id,Vgs: 19.5 mOhm @ 7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4226DY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4226DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4226DY-T1-GE3
MOSFET 2N-CH 25V 8A 8SOIC

MOSFET 2N-CH 25V 8A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4226DY-T1-GE3TR-ND 1095909-SI4226DY-T1-GE3 SI4226DY-T1-GE3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4226DY-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO
Polarity N-Channel
V(BR)DSS 25 volts
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