Manufacturer: Vishay
Win Source Part Number: 1095907-SI4204DY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.25W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 19.8A
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2110pF @ 10V
Maximum Rds On at Id,Vgs: 4.6 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Mosfet Array 2 N-Channel (Dual) 20V 19.8A 3.25W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 19.8A 3.25W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 19.8A 3.25W Surface Mount 8-SOIC
2-Ch N-Ch JFET, 20V, 19.8A ID, 3.8mR RdsOn, SO, SM Product overview: SI4204DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 19.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 19.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4204DY-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 20V 19.8A 8SOIC
MOSFET 2N-CH 20V 19.8A 8-SOIC
Dual MOSFET, Dual N Channel, 19.8 A, 20 V, 0.0038 ohm, 10 V, 1 V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1095907-SI4204DY-T1-GE3 | SI4204DY-T1-GE3CT-ND | 278-SI4204DY-T1-GE3 | SI4204DY-T1-GE3 | SI4204DY-T1-GE3 | SI4204DY-T1-GE3 | 97W2648 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4204DY-T1-GE3 | FET, MOSFET Arrays | 20V 19.8A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays | MOSFET | Dual Mosfet, Dual N Channel, 19.8 A, 20 V, 0.0038 Ohm, 10 V, 1 V Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 3250 milliwatts | 3250 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
