Vishay Precision Group FET, MOSFET Arrays SI4202DY-T1-GE3

Description
Mosfet Array 2 N-Channel (Dual) 30V 12.1A 3.7W Surface Mount 8-SOIC
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Description
Mosfet Array 2 N-Channel (Dual) 30V 12.1A 3.7W Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI4202DY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4202DY-T1-GE3CT-ND
FET, MOSFET Arrays SI4202DY-T1-GE3CT-ND
Mosfet Array 2 N-Channel (Dual) 30V 12.1A 3.7W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 12.1A 3.7W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI4202DY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4202DY-T1-GE3TR-ND
FET, MOSFET Arrays SI4202DY-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 30V 12.1A 3.7W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 12.1A 3.7W Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - SI4202DY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI4202DY-T1-GE3DKR-ND
FET, MOSFET Arrays SI4202DY-T1-GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) 30V 12.1A 3.7W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 12.1A 3.7W Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
Dual 30V MOSFET Transistor
278-SI4202DY-T1-GE3
Dual 30V MOSFET Transistor 278-SI4202DY-T1-GE3
2N-CH MOSFET 30V 14mR SO DUAL N-CH Product overview: SI4202DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4202DY-T1-GE3 can be used for catalog matching and distributor lookup.

2N-CH MOSFET 30V 14mR SO DUAL N-CH Product overview: SI4202DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4202DY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - SI4202DY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI4202DY-T1-GE3
FET, MOSFET Arrays SI4202DY-T1-GE3
MOSFET 2N-CH 30V 12.1A 8SO

MOSFET 2N-CH 30V 12.1A 8SO

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4202DY-T1-GE3 - 1095906-SI4202DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4202DY-T1-GE3
1095906-SI4202DY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4202DY-T1-GE3 1095906-SI4202DY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095906-SI4202DY-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 3.7W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12.1A Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 17nC @ 10V Max Input Capacitance: 710pF @ 15V Maximum Rds On at Id,Vgs: 14 mOhm @ 8A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1095906-SI4202DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.7W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12.1A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 710pF @ 15V
Maximum Rds On at Id,Vgs: 14 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs SO-8

MOSFET 30V Vds 20V Vgs SO-8

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4202DY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4202DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4202DY-T1-GE3
MOSFET 2N-CH 30V 12.1A 8SOIC

MOSFET 2N-CH 30V 12.1A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4202DY-T1-GE3CT-ND 278-SI4202DY-T1-GE3 SI4202DY-T1-GE3 1095906-SI4202DY-T1-GE3 SI4202DY-T1-GE3 SI4202DY-T1-GE3
Product Name FET, MOSFET Arrays Dual 30V MOSFET Transistor FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4202DY-T1-GE3 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) SOT3; 8-SO
Polarity N-Channel N-Channel; 2 N-Channel (Dual) N-Channel
PD 3700 milliwatts 3700 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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