Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4202DY-T1-GE3 SI4202DY-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 1095906-SI4202DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 3.7W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12.1A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 710pF @ 15V
Maximum Rds On at Id,Vgs: 14 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Mosfet Array 2 N-Channel (Dual) 30V 12.1A 3.7W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 12.1A 3.7W Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 12.1A 3.7W Surface Mount 8-SOIC

2N-CH MOSFET 30V 14mR SO DUAL N-CH Product overview: SI4202DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4202DY-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 30V 12.1A 8SO