Manufacturer: Vishay
Win Source Part Number: 028460-SI4178DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 405pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 21 mOhm @ 8.4A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 12A 8SO
N-Channel 30V 12A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 30V 12A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 30V 12A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
MOSFET N-CH 30V 12A 8SO
MOSFET, N-CH, 30V, 12A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation RoHS Compliant: Yes
MOSFET, N CHANNEL, 30V, 12A, SOIC-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:5W; Product Range:-RoHS Compliant: Yes
MOSFET, N CHANNEL, 30V, 12A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028460-SI4178DY-T1-GE3 | SI4178DY-T1-GE3 | SI4178DY-T1-GE3DKR-ND | 8123205 | 8123205P | SI4178DY-T1-GE3 | SI4178DY-T1-GE3 | 01AC4994 | 86R3880 | 05W6942 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4178DY-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 12A, Soic; Transistor Polarity Vishay | Mosfet, N Channel, 30V, 12A, Soic-8, Full Reel; Channel Type Vishay | Mosfet, N Channel, 30V, 12A, Soic-8; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | ||||||||
| PD | 2400 to 5000 milliwatts | 2400 milliwatts | 5000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | Soic | SOIC | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 | TO-3 |
