Manufacturer: Vishay
Win Source Part Number: 211635-SI4178DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Family Name: SI4178DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 405pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 21 mOhm @ 8.4A, 10V
Alternative Parts (Cross-Reference): TPC8021-H(Q); STS7NF30L; FDS4488; TSM4414CS;
Introduction Date: February 03, 2010
ECCN: EAR99
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 12A 8SO
MOSFET N-CH 30V 12A 8SO
MOSFET N-CH 30V 12A 8SO
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 211635-SI4178DY-T1-E3 | SI4178DY-T1-E3-ND | SI4178DY-T1-E3 | 880-SI4178DY-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4178DY-T1-E3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 30V 12A 8SO |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | |||
| PD | 2400 to 5000 milliwatts | 2400 milliwatts |
