Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4176DY-T1-E3 SI4176DY-T1-E3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 794243-SI4176DY-T1-E 3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Family Name: SI4176DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: 8-SO Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 490pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 2.4W (Ta), 5W (Tc) Rds On (Maximum) @ Id, Vgs: 20 mOhm @ 8.3A, 10V Alternative Parts (Cross-Reference): CWDM3011N; CWDM3011N TR13; MDS1528URH; NDS8410S; Introduction Date: December 08, 2009 ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 794243-SI4176DY-T1-E 3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Family Name: SI4176DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: 8-SO Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 490pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 2.4W (Ta), 5W (Tc) Rds On (Maximum) @ Id, Vgs: 20 mOhm @ 8.3A, 10V Alternative Parts (Cross-Reference): CWDM3011N; CWDM3011N TR13; MDS1528URH; NDS8410S; Introduction Date: December 08, 2009 ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4176DY-T1-E3 - 794243-SI4176DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4176DY-T1-E3
794243-SI4176DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4176DY-T1-E3 794243-SI4176DY-T1-E3
Manufacturer: Vishay Siliconix Win Source Part Number: 794243-SI4176DY-T1-E 3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-SOIC (0.154", 3.90mm Width) Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Family Name: SI4176DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: 8-SO Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 2.2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 490pF @ 15V Vgs (Maximum): ±20V Power Dissipation (Maximum): 2.4W (Ta), 5W (Tc) Rds On (Maximum) @ Id, Vgs: 20 mOhm @ 8.3A, 10V Alternative Parts (Cross-Reference): CWDM3011N; CWDM3011N TR13; MDS1528URH; NDS8410S; Introduction Date: December 08, 2009 ECCN: EAR99 Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 794243-SI4176DY-T1-E3
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Family Name: SI4176DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 8-SO
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 490pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.4W (Ta), 5W (Tc)
Rds On (Maximum) @ Id, Vgs: 20 mOhm @ 8.3A, 10V
Alternative Parts (Cross-Reference): CWDM3011N; CWDM3011N TR13; MDS1528URH; NDS8410S;
Introduction Date: December 08, 2009
ECCN: EAR99
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4176DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4176DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4176DY-T1-E3
MOSFET N-CH 30V 12A 8SO

MOSFET N-CH 30V 12A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 794243-SI4176DY-T1-E3 SI4176DY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4176DY-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 2400 to 5000 milliwatts
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