Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4174DY-T1-GE3 SI4174DY-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028459-SI4174DY-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Family Name: Si4174DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 985pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): SI4822DY_NL; Si4822DY; SI4822DY_Q; Introduction Date: November 20, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 028459-SI4174DY-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Family Name: Si4174DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 985pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): SI4822DY_NL; Si4822DY; SI4822DY_Q; Introduction Date: November 20, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4174DY-T1-GE3 - 028459-SI4174DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4174DY-T1-GE3
028459-SI4174DY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4174DY-T1-GE3 028459-SI4174DY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028459-SI4174DY-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Family Name: Si4174DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 985pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): SI4822DY_NL; Si4822DY; SI4822DY_Q; Introduction Date: November 20, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028459-SI4174DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Family Name: Si4174DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 985pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): SI4822DY_NL; Si4822DY; SI4822DY_Q;
Introduction Date: November 20, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI4174DY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4174DY-T1-GE3
Single FETs, MOSFETs SI4174DY-T1-GE3
MOSFET N-CH 30V 17A 8SO

MOSFET N-CH 30V 17A 8SO

Supplier's Site Datasheet
Single FETs, MOSFETs - SI4174DY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4174DY-T1-GE3TR-ND
Single FETs, MOSFETs SI4174DY-T1-GE3TR-ND
N-Channel 30V 17A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 17A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4174DY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4174DY-T1-GE3CT-ND
Single FETs, MOSFETs SI4174DY-T1-GE3CT-ND
N-Channel 30V 17A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 17A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4174DY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4174DY-T1-GE3DKR-ND
Single FETs, MOSFETs SI4174DY-T1-GE3DKR-ND
N-Channel 30V 17A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 17A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs SO-8

MOSFET 30V Vds 20V Vgs SO-8

Buy Now Datasheet
Mosfet,n Channel,30V,17A,so8; Channel Type Vishay - 90R9128 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Channel,30V,17A,so8; Channel Type Vishay
90R9128
Mosfet,n Channel,30V,17A,so8; Channel Type Vishay 90R9128
MOSFET,N CHANNEL,30V,17A,SO8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; No. of Pins:8PinsRoHS Compliant: Yes

MOSFET,N CHANNEL,30V,17A,SO8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; No. of Pins:8PinsRoHS Compliant: Yes

Supplier's Site
30V 17A 9.5mΩ@10V,10A 5W 2.2V@250uA N Channel SOIC-8_150mil MOSFETs ROHS - 17930-SI4174DY-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
30V 17A 9.5mΩ@10V,10A 5W 2.2V@250uA N Channel SOIC-8_150mil MOSFETs ROHS
17930-SI4174DY-T1-GE3
30V 17A 9.5mΩ@10V,10A 5W 2.2V@250uA N Channel SOIC-8_150mil MOSFETs ROHS 17930-SI4174DY-T1-GE3
30V 17A 9.5mΩ@10V,10A 5W 2.2V@250uA N Channel SOIC-8_150mil MOSFETs ROHS

30V 17A 9.5mΩ@10V,10A 5W 2.2V@250uA N Channel SOIC-8_150mil MOSFETs ROHS

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI4174DY-T1-GE3
Triode/MOS Tube/Transistor >> MOSFETs SI4174DY-T1-GE3
30V 17A 9.5mΩ@10V,10A 2.2V@250uA N Channel SOIC-8 MOSFETs ROHS

30V 17A 9.5mΩ@10V,10A 2.2V@250uA N Channel SOIC-8 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4174DY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4174DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4174DY-T1-GE3
MOSFET N-CH 30V 17A 8SO

MOSFET N-CH 30V 17A 8SO

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Utmel Electronic Limited LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028459-SI4174DY-T1-GE3 SI4174DY-T1-GE3 SI4174DY-T1-GE3TR-ND SI4174DY-T1-GE3 90R9128 17930-SI4174DY-T1-GE3 SI4174DY-T1-GE3 SI4174DY-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4174DY-T1-GE3 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet,n Channel,30V,17A,so8; Channel Type Vishay 30V 17A 9.5mΩ@10V,10A 5W 2.2V@250uA N Channel SOIC-8_150mil MOSFETs ROHS Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts 30 volts
PD 2500 to 5000 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) "8-SOIC (0.154"", 3.90mm Width)" TO-3 8-SOIC (0.154, 3.90mm Width)
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