N-Channel 30V 17A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 30V 17A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 30V 17A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
MOSFET N-CH 30V 17A 8SO
N-Channel JFET, 30V, 17A ID, 9.5mR RDS(on), SOP-8 Product overview: SI4174DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4174DY-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028459-SI4174DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Family Name: Si4174DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 985pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): SI4822DY_NL; Si4822DY; SI4822DY_Q;
Introduction Date: November 20, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
30V 17A 9.5mΩ@10V,10A 5W 2.2V@250uA N Channel SOIC-8_150mil MOSFETs ROHS
MOSFET N-CH 30V 17A 8SO
30V 17A 9.5mΩ@10V,10A 2.2V@250uA N Channel SOIC-8 MOSFETs ROHS
MOSFET,N CHANNEL,30V,17A,SO8;
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4174DY-T1-GE3TR-ND | SI4174DY-T1-GE3 | 278-SI4174DY-T1-GE3 | 028459-SI4174DY-T1-GE3 | 17930-SI4174DY-T1-GE3 | SI4174DY-T1-GE3 | SI4174DY-T1-GE3 | SI4174DY-T1-GE3 | 90R9128 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 30V 17A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4174DY-T1-GE3 | 30V 17A 9.5mΩ@10V,10A 5W 2.2V@250uA N Channel SOIC-8_150mil MOSFETs ROHS | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet,n Channel,30V,17A,so8; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | 8-SOIC (0.154, 3.90mm Width) | TO-3 | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||||
| IDSS | 17000 milliamps | 17000 milliamps |
