Manufacturer: Vishay
Win Source Part Number: 028459-SI4174DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Family Name: Si4174DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 985pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): SI4822DY_NL; Si4822DY; SI4822DY_Q;
Introduction Date: November 20, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 17A 8SO
N-Channel 30V 17A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 30V 17A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 30V 17A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
MOSFET,N CHANNEL,30V,17A,SO8;
MOSFET N-CH 30V 17A 8SO
30V 17A 9.5mΩ@10V,10A 5W 2.2V@250uA N Channel SOIC-8_150mil MOSFETs ROHS
30V 17A 9.5mΩ@10V,10A 2.2V@250uA N Channel SOIC-8 MOSFETs ROHS
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028459-SI4174DY-T1-GE3 | SI4174DY-T1-GE3 | SI4174DY-T1-GE3TR-ND | 90R9128 | SI4174DY-T1-GE3 | 17930-SI4174DY-T1-GE3 | SI4174DY-T1-GE3 | SI4174DY-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4174DY-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet,n Channel,30V,17A,so8; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | 30V 17A 9.5mΩ@10V,10A 5W 2.2V@250uA N Channel SOIC-8_150mil MOSFETs ROHS | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| PD | 2500 to 5000 milliwatts | 2500 milliwatts | 2500 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | 8-SOIC (0.154, 3.90mm Width) |
