Manufacturer: Vishay
Win Source Part Number: 108092-SI4168DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Family Name: Si4168DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 1720pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): IRF7836PBF; TPC8016-H(T2LIB3QM; IRF7836TRPBF; FDS6688-NF40;
Introduction Date: November 09, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
N-Channel 30V 24A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC
N-Channel 30V 24A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC
N-Channel 30V 24A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC
N-Channel MOSFET 30V 24A 5.7mR SO Surface Mount Product overview: SI4168DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4168DY-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 24A 8SO
MOSFET N-CH 30V 24A 8SO
N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:5.7W RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 108092-SI4168DY-T1-GE3 | SI4168DY-T1-GE3TR-ND | 278-SI4168DY-T1-GE3 | SI4168DY-T1-GE3 | SI4168DY-T1-GE3 | SI4168DY-T1-GE3 | 26R1870 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4168DY-T1-GE3 | Single FETs, MOSFETs | N-Channel SMD 30V 24A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | N Ch Mosfet; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 2500 to 5700 milliwatts | 5700 milliwatts | 2500 milliwatts | 5700 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |