Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4168DY-T1-GE3 SI4168DY-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 108092-SI4168DY-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Family Name: Si4168DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 1720pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): IRF7836PBF; TPC8016-H(T2LIB3QM; IRF7836TRPBF; FDS6688-NF40; Introduction Date: November 09, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 108092-SI4168DY-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Family Name: Si4168DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 1720pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): IRF7836PBF; TPC8016-H(T2LIB3QM; IRF7836TRPBF; FDS6688-NF40; Introduction Date: November 09, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4168DY-T1-GE3 - 108092-SI4168DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4168DY-T1-GE3
108092-SI4168DY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4168DY-T1-GE3 108092-SI4168DY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 108092-SI4168DY-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Family Name: Si4168DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 24A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 1720pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): IRF7836PBF; TPC8016-H(T2LIB3QM; IRF7836TRPBF; FDS6688-NF40; Introduction Date: November 09, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 108092-SI4168DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Family Name: Si4168DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 1720pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): IRF7836PBF; TPC8016-H(T2LIB3QM; IRF7836TRPBF; FDS6688-NF40;
Introduction Date: November 09, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI4168DY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4168DY-T1-GE3TR-ND
Single FETs, MOSFETs SI4168DY-T1-GE3TR-ND
N-Channel 30V 24A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC

N-Channel 30V 24A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4168DY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4168DY-T1-GE3CT-ND
Single FETs, MOSFETs SI4168DY-T1-GE3CT-ND
N-Channel 30V 24A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC

N-Channel 30V 24A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4168DY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4168DY-T1-GE3DKR-ND
Single FETs, MOSFETs SI4168DY-T1-GE3DKR-ND
N-Channel 30V 24A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC

N-Channel 30V 24A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Singapore, Singapore
N-Channel SMD 30V 24A MOSFET Transistor
278-SI4168DY-T1-GE3
N-Channel SMD 30V 24A MOSFET Transistor 278-SI4168DY-T1-GE3
N-Channel MOSFET 30V 24A 5.7mR SO Surface Mount Product overview: SI4168DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4168DY-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel MOSFET 30V 24A 5.7mR SO Surface Mount Product overview: SI4168DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4168DY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4168DY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4168DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4168DY-T1-GE3
MOSFET N-CH 30V 24A 8SO

MOSFET N-CH 30V 24A 8SO

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs SO-8

MOSFET 30V Vds 20V Vgs SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI4168DY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4168DY-T1-GE3
Single FETs, MOSFETs SI4168DY-T1-GE3
MOSFET N-CH 30V 24A 8SO

MOSFET N-CH 30V 24A 8SO

Supplier's Site Datasheet
N Ch Mosfet; Channel Type Vishay - 26R1870 - Newark, An Avnet Company
Chicago, IL, United States
N Ch Mosfet; Channel Type Vishay
26R1870
N Ch Mosfet; Channel Type Vishay 26R1870
N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:5.7W RoHS Compliant: Yes

N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; Power Dissipation:5.7W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global) Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 108092-SI4168DY-T1-GE3 SI4168DY-T1-GE3TR-ND 278-SI4168DY-T1-GE3 SI4168DY-T1-GE3 SI4168DY-T1-GE3 SI4168DY-T1-GE3 26R1870
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4168DY-T1-GE3 Single FETs, MOSFETs N-Channel SMD 30V 24A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs N Ch Mosfet; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 2500 to 5700 milliwatts 5700 milliwatts 2500 milliwatts 5700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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