Vishay Precision Group Single FETs, MOSFETs SI4166DY-T1-GE3

Description
N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI4166DY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4166DY-T1-GE3DKR-ND
Single FETs, MOSFETs SI4166DY-T1-GE3DKR-ND
N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4166DY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4166DY-T1-GE3TR-ND
Single FETs, MOSFETs SI4166DY-T1-GE3TR-ND
N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4166DY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4166DY-T1-GE3CT-ND
Single FETs, MOSFETs SI4166DY-T1-GE3CT-ND
N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
N-Channel 30V 30.5A MOSFET Transistor
278-SI4166DY-T1-GE3
N-Channel 30V 30.5A MOSFET Transistor 278-SI4166DY-T1-GE3
N-Channel JFET, 30V, 30.5A ID, 3.9mR Rds(on), SOP-8 Product overview: SI4166DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 30.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4166DY-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel JFET, 30V, 30.5A ID, 3.9mR Rds(on), SOP-8 Product overview: SI4166DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 30.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4166DY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4166DY-T1-GE3 - 028457-SI4166DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4166DY-T1-GE3
028457-SI4166DY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4166DY-T1-GE3 028457-SI4166DY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028457-SI4166DY-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 6.5W (Tc) Family Name: Si4166DY Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 30.5A (Tc) Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 2730pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.9 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): TPC8029(T2LSAN2,QMIR F7835UTRPBF; TPC8029(TE12L,V,M); IRF7832PBFTR; Introduction Date: November 09, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028457-SI4166DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Family Name: Si4166DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 30.5A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 2730pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.9 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): TPC8029(T2LSAN2,QMIRF7835UTRPBF; TPC8029(TE12L,V,M); IRF7832PBFTR;
Introduction Date: November 09, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Mosfet Transistor, N Channel, 30.5 A, 30 V, 0.0032 Ohm, 10 V, 1.2 V Rohs Compliant Vishay - 97W2647 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 30.5 A, 30 V, 0.0032 Ohm, 10 V, 1.2 V Rohs Compliant Vishay
97W2647
Mosfet Transistor, N Channel, 30.5 A, 30 V, 0.0032 Ohm, 10 V, 1.2 V Rohs Compliant Vishay 97W2647
MOSFET Transistor, N Channel, 30.5 A, 30 V, 0.0032 ohm, 10 V, 1.2 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 30.5 A, 30 V, 0.0032 ohm, 10 V, 1.2 V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs SO-8

MOSFET 30V Vds 20V Vgs SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4166DY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4166DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4166DY-T1-GE3
MOSFET N-CH 30V 30.5A 8SO

MOSFET N-CH 30V 30.5A 8SO

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI4166DY-T1-GE3DKR-ND 278-SI4166DY-T1-GE3 028457-SI4166DY-T1-GE3 97W2647 SI4166DY-T1-GE3 SI4166DY-T1-GE3
Product Name Single FETs, MOSFETs N-Channel 30V 30.5A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4166DY-T1-GE3 Mosfet Transistor, N Channel, 30.5 A, 30 V, 0.0032 Ohm, 10 V, 1.2 V Rohs Compliant Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO TO-3 8-SOIC (0.154, 3.90mm Width)
PD 6500 milliwatts 3000 to 6500 milliwatts
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