N-Channel JFET, 30V, 30.5A ID, 3.9mR Rds(on), SOP-8 Product overview: SI4166DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 30.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4166DY-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC
N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC
N-Channel 30V 30.5A (Tc) 3W (Ta), 6.5W (Tc) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028457-SI4166DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Family Name: Si4166DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 30.5A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 2730pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.9 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): TPC8029(T2LSAN2,QMIR
Introduction Date: November 09, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 30.5A 8SO
MOSFET Transistor, N Channel, 30.5 A, 30 V, 0.0032 ohm, 10 V, 1.2 V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4166DY-T1-GE3 | SI4166DY-T1-GE3DKR-ND | 028457-SI4166DY-T1-GE3 | SI4166DY-T1-GE3 | SI4166DY-T1-GE3 | 97W2647 |
| Product Name | N-Channel 30V 30.5A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4166DY-T1-GE3 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 30.5 A, 30 V, 0.0032 Ohm, 10 V, 1.2 V Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 6500 milliwatts | 3000 to 6500 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |