N-Ch MOSFET, 30V, 7.9mR, 19.3A, SOIC-8, Surface Mount Product overview: SI4162DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 19.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 19.3A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4162DY-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 30V 19.3A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 30V 19.3A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 30V 19.3A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028455-SI4162DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 19.3A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 1155pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.9 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
MOSFET N-CH 30V 19.3A 8SO
MOSFET, N-CH, 30V, 19.3A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:19.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power DissipationRoHS Compliant: Yes
MOSFET, N CHANNEL, 30V, 19.3A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:19.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET, N CHANNEL, 30V, 19.3A, SOIC-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:19.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:5W RoHS Compliant: Yes
MOSFET N-CH 30V 19.3A 8SO
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Utmel Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI4162DY-T1-GE3 | SI4162DY-T1-GE3CT-ND | 028455-SI4162DY-T1-GE3 | SI4162DY-T1-GE3 | 17930-SI4162DY-T1-GE3 | 55R1921 | 05W6941 | 15R4971 | SI4162DY-T1-GE3 | SI4162DY-T1-GE3 |
| Product Name | SMD 30V 19.3A SOIC MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4162DY-T1-GE3 | Single FETs, MOSFETs | SO-8 MOSFETs ROHS | Mosfet, N-Ch, 30V, 19.3A, So8; Transistor Polarity Vishay | Mosfet, N Channel, 30V, 19.3A, Soic-8; Channel Type Vishay | Mosfet, N Channel, 30V, 19.3A, Soic-8, Full Reel; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| PD | 5000 milliwatts | 2500 to 5000 milliwatts | 2500 milliwatts | 5000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | TO-3 | TO-3 | TO-3 | 8-SOIC (0.154, 3.90mm Width) | |||
| V(BR)DSS | 30 volts | 30 volts |
