N-Channel 30V 24A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SOIC
N-Channel 30V 24A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SOIC
N-Channel 30V 24A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SOIC
N-Channel JFET, 30V, 24A ID, 6mR Rds(on), SOP-8 Product overview: SI4156DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 24A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4156DY-T1-GE3
MOSFET N-CH 30V 24A 8SO
Manufacturer: Vishay
Win Source Part Number: 028453-SI4156DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Family Name: Si4156DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 24A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1700pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 15.7A, 10V
Alternative Parts (Cross-Reference): FDS6688AS; FDS8896_NL; SSM4430;
Introduction Date: July 07, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient
N CHANNEL MOSFET, 30V, 24A; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:24A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.2V; Gate Source Threshold Voltage Max:2.2V; Product Range:- RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 24A, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:24A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.2V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes
MOSFET N-CH 30V 24A 8SO
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4156DY-T1-GE3TR-ND | 2088-SI4156DY-T1-GE3 | SI4156DY-T1-GE3 | 028453-SI4156DY-T1-GE3 | 35R6233 | SI4156DY-T1-GE3 | SI4156DY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | N-Channel 30V 24A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4156DY-T1-GE3 | N Channel Mosfet, 30V, 24A; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | TO-3 | 8-SOIC (0.154, 3.90mm Width) | ||
| PD | 6000 milliwatts | 2500 milliwatts | 2500 to 6000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
