P-Channel 30V 14.3A (Ta), 19.3A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SOIC
P-Channel 30V 14.3A (Ta), 19.3A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SOIC
P-Channel 30V 14.3A (Ta), 19.3A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SOIC
Trans MOSFET P-CH 30V 14.3A 8-Pin SOIC N T/R Product overview: SI4153DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 14.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14.3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4153DY-T1-GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1092898-SI4153DY-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen III
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SI4153DY-T1-GE3T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
P-CHANNEL 30-V (D-S) MOSFET SO-8
MOSFET, P-CH, 30V, 19.3A, SOIC ROHS COMPLIANT: YES
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SI4153DY-T1-GE3DKR-ND | 278-SI4153DY-T1-GE3 | 1092898-SI4153DY-T1-GE3 | 2395363 | SI4153DY-T1-GE3 | 26AK3559 |
| Product Name | Single FETs, MOSFETs | 30V 14.3A SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 30V, 19.3A, Soic Rohs Compliant Vishay |
| Polarity | P-Channel | P-Channel | P-Channel | |||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Tape and Reel | SO-8; SOT3 | SO-8; SO-8 | 8-SOIC (0.154, 3.90mm Width) | TO-3 |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 30 volts |
