Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SI4153DY-T1-GE3

Description
Win Source Part Number: 1092898-SI4153DY-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen III Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SI4153DY-T1-GE3T R,742-SI4153DY-T1-GE 3CT,742-SI4153DY-T1- GE3DKR Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1092898-SI4153DY-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen III Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SI4153DY-T1-GE3T R,742-SI4153DY-T1-GE 3CT,742-SI4153DY-T1- GE3DKR Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1092898-SI4153DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1092898-SI4153DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1092898-SI4153DY-T1-GE3
Win Source Part Number: 1092898-SI4153DY-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen III Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SI4153DY-T1-GE3T R,742-SI4153DY-T1-GE 3CT,742-SI4153DY-T1- GE3DKR Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1092898-SI4153DY-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen III
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 14.3A (Ta), 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SI4153DY-T1-GE3TR,742-SI4153DY-T1-GE3CT,742-SI4153DY-T1-GE3DKR
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now
MOSFETs - 2395363 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2395363
MOSFETs 2395363
P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET

Supplier's Site
MOSFETs - 2395362 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2395362
MOSFETs 2395362
P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET

Supplier's Site
MOSFETs - 2395363P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2395363P
MOSFETs 2395363P
P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET

Supplier's Site
Singapore
30V 14.3A SOIC MOSFET Transistor
278-SI4153DY-T1-GE3
30V 14.3A SOIC MOSFET Transistor 278-SI4153DY-T1-GE3
Trans MOSFET P-CH 30V 14.3A 8-Pin SOIC N T/R Product overview: SI4153DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 14.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14.3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4153DY-T1-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET P-CH 30V 14.3A 8-Pin SOIC N T/R Product overview: SI4153DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 14.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 14.3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4153DY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 742-SI4153DY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SI4153DY-T1-GE3DKR-ND
Single FETs, MOSFETs 742-SI4153DY-T1-GE3DKR-ND
P-Channel 30V 14.3A (Ta), 19.3A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SOIC

P-Channel 30V 14.3A (Ta), 19.3A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - 742-SI4153DY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SI4153DY-T1-GE3CT-ND
Single FETs, MOSFETs 742-SI4153DY-T1-GE3CT-ND
P-Channel 30V 14.3A (Ta), 19.3A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SOIC

P-Channel 30V 14.3A (Ta), 19.3A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - 742-SI4153DY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SI4153DY-T1-GE3TR-ND
Single FETs, MOSFETs 742-SI4153DY-T1-GE3TR-ND
P-Channel 30V 14.3A (Ta), 19.3A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SOIC

P-Channel 30V 14.3A (Ta), 19.3A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4153DY-T1-GE3 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4153DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4153DY-T1-GE3
P-CHANNEL 30-V (D-S) MOSFET SO-8

P-CHANNEL 30-V (D-S) MOSFET SO-8

Supplier's Site
Mosfet, P-Ch, 30V, 19.3A, Soic Rohs Compliant Vishay - 26AK3559 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 30V, 19.3A, Soic Rohs Compliant Vishay
26AK3559
Mosfet, P-Ch, 30V, 19.3A, Soic Rohs Compliant Vishay 26AK3559
MOSFET, P-CH, 30V, 19.3A, SOIC ROHS COMPLIANT: YES

MOSFET, P-CH, 30V, 19.3A, SOIC ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. ERSAELECTRONICS PTE. LTD. DigiKey Acme Chip Technology Co., Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1092898-SI4153DY-T1-GE3 2395363 278-SI4153DY-T1-GE3 742-SI4153DY-T1-GE3DKR-ND SI4153DY-T1-GE3 26AK3559
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFETs 30V 14.3A SOIC MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, 30V, 19.3A, Soic Rohs Compliant Vishay
Polarity P-Channel P-Channel P-Channel
PD 3100 to 5600 milliwatts 3100 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type SO-8; SOT3 SO-8; SO-8 Tape and Reel "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154, 3.90mm Width) TO-3
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