MOSFET N-CH 20V 46A 8SO
N-Channel 20V 46A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
N-Channel 20V 46A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
N-Channel 20V 46A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
N-Channel JFET, 20V, 46A ID, 1.95mR Rds(on), SOIC Product overview: SI4136DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 46A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 46A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4136DY-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 064473-SI4136DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 46A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 4560pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
MOSFET, N CHANNEL, 20V, 0.00155OHM, 46A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:46A; On Resistance Rds(on):0.00155ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes
MOSFET Transistor, N Channel, 46 A, 20 V, 0.00155 ohm, 10 V, 1 V RoHS Compliant: Yes
20V 46A 7.8W 2mΩ@10V,15A 2.2V@250uA N Channel SOIC-8_150mil MOSFETs ROHS
MOSFET N-CH 20V 46A 8SO
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI4136DY-T1-GE3 | SI4136DY-T1-GE3TR-ND | 278-SI4136DY-T1-GE3 | 064473-SI4136DY-T1-GE3 | SI4136DY-T1-GE3 | 85W3204 | 97W2645 | 17930-SI4136DY-T1-GE3 | SI4136DY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 20V 46A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4136DY-T1-GE3 | MOSFET | Mosfet, N Channel, 20V, 0.00155Ohm, 46A, Soic-8; Transistor Polarity Vishay | Mosfet Transistor, N Channel, 46 A, 20 V, 0.00155 Ohm, 10 V, 1 V Rohs Compliant Vishay | 20V 46A 7.8W 2mΩ@10V,15A 2.2V@250uA N Channel SOIC-8_150mil MOSFETs ROHS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 20 volts | 20 volts | |||||||
| IDSS | 46000 milliamps | 46000 milliamps | |||||||
| PD | 3500 milliwatts | 7800 milliwatts | 3500 to 7800 milliwatts |
