N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-CH MOSFET 30V 14A 14mR SOIC Surface Mount Product overview: SI4134DY-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 14A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 14A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4134DY-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 14A 8SO
Manufacturer: Vishay
Win Source Part Number: 064472-SI4134DY-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 846pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 10A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 14A 8SO
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 14A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
30V 14A 14mΩ@10A,10V 2.5V@250uA null SO-8 MOSFETs ROHS
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Radwell International | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4134DY-T1-E3DKR-ND | 278-SI4134DY-T1-E3 | SI4134DY-T1-E3 | 064472-SI4134DY-T1-E3 | SI4134DY-T1-E3 | 88693033 | SI4134DY-T1-E3 | SI4134DY-T1-E3 |
| Product Name | Single FETs, MOSFETs | SMD 30V 14A SOIC MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4134DY-T1-E3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | 8-SOIC (0.154, 3.90mm Width) | SO-8 | |||
| PD | 5000 milliwatts | 2500 milliwatts | 2500 to 5000 milliwatts | 2500 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
