Vishay Intertechnology, Inc. Transistor SI4134DY-T1-E3

Description
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 14A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
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Description
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 14A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistor - 88693033 - Radwell International
Willingboro, NJ, United States
Transistor
88693033
Transistor 88693033
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 14A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 14A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4134DY-T1-E3 - 064472-SI4134DY-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4134DY-T1-E3
064472-SI4134DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4134DY-T1-E3 064472-SI4134DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 064472-SI4134DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 23nC @ 10V Max Input Capacitance: 846pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 10A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 064472-SI4134DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 23nC @ 10V
Max Input Capacitance: 846pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 10A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI4134DY-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4134DY-T1-E3
Single FETs, MOSFETs SI4134DY-T1-E3
MOSFET N-CH 30V 14A 8SO

MOSFET N-CH 30V 14A 8SO

Supplier's Site Datasheet
Single FETs, MOSFETs - SI4134DY-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4134DY-T1-E3TR-ND
Single FETs, MOSFETs SI4134DY-T1-E3TR-ND
N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4134DY-T1-E3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4134DY-T1-E3DKR-ND
Single FETs, MOSFETs SI4134DY-T1-E3DKR-ND
N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4134DY-T1-E3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4134DY-T1-E3CT-ND
Single FETs, MOSFETs SI4134DY-T1-E3CT-ND
N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4134DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4134DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4134DY-T1-E3
MOSFET N-CH 30V 14A 8SO

MOSFET N-CH 30V 14A 8SO

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs SO-8

MOSFET 30V Vds 20V Vgs SO-8

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
SI4134DY-T1-E3
Triode/MOS Tube/Transistor >> MOSFETs SI4134DY-T1-E3
30V 14A 14mΩ@10A,10V 2.5V@250uA null SO-8 MOSFETs ROHS

30V 14A 14mΩ@10A,10V 2.5V@250uA null SO-8 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Radwell International Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 88693033 064472-SI4134DY-T1-E3 SI4134DY-T1-E3 SI4134DY-T1-E3TR-ND SI4134DY-T1-E3 SI4134DY-T1-E3 SI4134DY-T1-E3
Product Name Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4134DY-T1-E3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts 30 volts
PD 2500 to 5000 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO 8-SOIC (0.154", 3.90mm Width) "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154, 3.90mm Width) SO-8
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