Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4128DY-T1-GE3 SI4128DY-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028450-SI4128DY-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.9A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 435pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 7.8A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 028450-SI4128DY-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.9A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 435pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 7.8A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4128DY-T1-GE3 - 028450-SI4128DY-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4128DY-T1-GE3
028450-SI4128DY-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4128DY-T1-GE3 028450-SI4128DY-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028450-SI4128DY-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10.9A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 435pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 7.8A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028450-SI4128DY-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10.9A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 435pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 7.8A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
MOSFETs - 7103311 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7103311
MOSFETs 7103311
MOSFET N-Channel 30V 7.5A SOIC8

MOSFET N-Channel 30V 7.5A SOIC8

Supplier's Site
MOSFETs - 7103311P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7103311P
MOSFETs 7103311P
MOSFET N-Channel 30V 7.5A SOIC8

MOSFET N-Channel 30V 7.5A SOIC8

Supplier's Site
MOSFETs - 1652749 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1652749
MOSFETs 1652749
MOSFET N-Channel 30V 7.5A SOIC8

MOSFET N-Channel 30V 7.5A SOIC8

Supplier's Site
Single FETs, MOSFETs - SI4128DY-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4128DY-T1-GE3DKR-ND
Single FETs, MOSFETs SI4128DY-T1-GE3DKR-ND
N-Channel 30V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4128DY-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4128DY-T1-GE3TR-ND
Single FETs, MOSFETs SI4128DY-T1-GE3TR-ND
N-Channel 30V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - SI4128DY-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI4128DY-T1-GE3CT-ND
Single FETs, MOSFETs SI4128DY-T1-GE3CT-ND
N-Channel 30V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC

N-Channel 30V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
N-Channel 30V 10.9A SOIC MOSFET Transistor
278-SI4128DY-T1-GE3
N-Channel 30V 10.9A SOIC MOSFET Transistor 278-SI4128DY-T1-GE3
N-Channel JFET, 30V, 10.9A ID, 24mR Rds On, SOIC Product overview: SI4128DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 10.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4128DY-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel JFET, 30V, 10.9A ID, 24mR Rds On, SOIC Product overview: SI4128DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 10.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4128DY-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N Channel, 30V, 10.9A, So8; Channel Type Vishay - 55R1919 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 30V, 10.9A, So8; Channel Type Vishay
55R1919
Mosfet, N Channel, 30V, 10.9A, So8; Channel Type Vishay 55R1919
MOSFET, N CHANNEL, 30V, 10.9A, SO8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, N CHANNEL, 30V, 10.9A, SO8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4128DY-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4128DY-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4128DY-T1-GE3
MOSFET N-CH 30V 10.9A 8SO

MOSFET N-CH 30V 10.9A 8SO

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs SO-8

MOSFET 30V Vds 20V Vgs SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SI4128DY-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI4128DY-T1-GE3
Single FETs, MOSFETs SI4128DY-T1-GE3
MOSFET N-CH 30V 10.9A 8SO

MOSFET N-CH 30V 10.9A 8SO

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 028450-SI4128DY-T1-GE3 7103311 7103311P SI4128DY-T1-GE3DKR-ND 278-SI4128DY-T1-GE3 55R1919 SI4128DY-T1-GE3 SI4128DY-T1-GE3 SI4128DY-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4128DY-T1-GE3 MOSFETs MOSFETs Single FETs, MOSFETs N-Channel 30V 10.9A SOIC MOSFET Transistor Mosfet, N Channel, 30V, 10.9A, So8; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 2400 to 5000 milliwatts 5000 milliwatts 2400 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO Soic SOIC "8-SOIC (0.154"", 3.90mm Width)" TO-3 8-SOIC (0.154, 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
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