N-Channel JFET, 30V, 10.9A ID, 24mR Rds On, SOIC Product overview: SI4128DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 10.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4128DY-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 30V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 30V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 30V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 028450-SI4128DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10.9A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 435pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 7.8A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
MOSFET, N CHANNEL, 30V, 10.9A, SO8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:10.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET N-CH 30V 10.9A 8SO
MOSFET N-CH 30V 10.9A 8SO
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI4128DY-T1-GE3 | SI4128DY-T1-GE3DKR-ND | 7103311 | 7103311P | 028450-SI4128DY-T1-GE3 | 55R1919 | SI4128DY-T1-GE3 | SI4128DY-T1-GE3 | SI4128DY-T1-GE3 |
| Product Name | N-Channel 30V 10.9A SOIC MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4128DY-T1-GE3 | Mosfet, N Channel, 30V, 10.9A, So8; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| PD | 5000 milliwatts | 2400 to 5000 milliwatts | 2400 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Soic | SOIC | SOT3; 8-SO | TO-3 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | ||
| MOSFET Operating Mode | Enhancement |
