The SI4122DY-T1-GE3 is an N-Channel MOSFET designed for RF applications, featuring a maximum drain-source voltage of 40 V and a continuous drain current rating of 27.2 A at 25 ¬8C. It has a low on-state resistance of 4.5 mOc at a gate-source voltage of 10 V, making it suitable for efficient power management in DC/DC conversion applications. The device is packaged in an SO-8 format and is compliant with lead-free and halogen-free standards. It operates over a wide temperature range from -55 ¬8C to +150 ¬8C, ensuring reliability in various environments. The maximum gate charge is 95 nC at 10 V, and it has a maximum gate-source voltage rating of ¬±25 V. This MOSFET is a common choice in the market, with a balanced supply and demand status, making it a viable option for engineers looking for a reliable component in their designs.
N-Channel 40V 27.2A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
N-Channel 40V 27.2A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
N-Channel 40V 27.2A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SOIC
Manufacturer: Vishay
Win Source Part Number: 1095898-SI4122DY-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Family Name: Si4122DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 27.2A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 4200pF @ 20V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): FDS8840NZ; TPC8046-H(TE12L,Q); TPC8046-H,LQ(CM; IRF7842TR;
Introduction Date: July 29, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
N-CH JFET 40V 27.2A 4.5mR SOIC N Product overview: SI4122DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 27.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 27.2A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4122DY-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 40V 27.2A 8SO
MOSFET, N-CH, 40V, 27.2A, SOIC ROHS COMPLIANT: YES
N CHANNEL MOSFET, 40V, 27.2A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:27.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:25V; Power Dissipation:3W RoHS Compliant: Yes
MOSFET N-CH 40V 27.2A 8SO
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI4122DY-T1-GE3CT-ND | 1095898-SI4122DY-T1-GE3 | 278-SI4122DY-T1-GE3 | SI4122DY-T1-GE3 | 57AJ0437 | 16P3726 | SI4122DY-T1-GE3 | SI4122DY-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4122DY-T1-GE3 | 40V 27.2A SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 40V, 27.2A, Soic Rohs Compliant Vishay | N Channel Mosfet, 40V, 27.2A, Soic, Full Reel; Channel Type Vishay | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 | 8-SOIC (0.154", 3.90mm Width) | ||
| V(BR)DSS | 40 volts | 40 volts | ||||||
| PD | 3000 to 6000 milliwatts | 3000 milliwatts | 3000 milliwatts | 3000 milliwatts |
