N-CH MOSFET 25V 12.7A 8.6mR SOIC Surface Mount Product overview: SI4116DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 25V, 12.7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 25V, 12.7A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI4116DY-T1-GE3
MOSFET N-CH 25V 18A 8SO
Manufacturer: Vishay
Win Source Part Number: 028448-SI4116DY-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Family Name: Si4116DY
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 1925pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 8.6 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): BSO083N03MS G; CSD16409Q3; CSD16411Q3; PHN1011;
Introduction Date: December 24, 2008
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
N-Channel 25V 18A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 25V 18A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N-Channel 25V 18A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
N CHANNEL MOSFET, 25V, 18A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:12V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
MOSFET N-CH 25V 18A 8SO
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2088-SI4116DY-T1-GE3 | 7103317 | 7103317P | SI4116DY-T1-GE3 | 028448-SI4116DY-T1-GE3 | SI4116DY-T1-GE3CT-ND | SI4116DY-T1-GE3 | 16P3725 | SI4116DY-T1-GE3 |
| Product Name | SMD 25V 12.7A SOIC MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4116DY-T1-GE3 | Single FETs, MOSFETs | MOSFET | N Channel Mosfet, 25V, 18A, Soic; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| PD | 5000 milliwatts | 2500 milliwatts | 2500 to 5000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| MOSFET Operating Mode | Enhancement | ||||||||
| Package Type | Soic | SOIC | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | 8-SOIC (0.154, 3.90mm Width) |
