Vishay Intertechnology, Inc. Single FETs, MOSFETs SI4116DY-T1-E3

MOSFET N-CH 25V 18A 8SO

Manufacturer: Vishay
Win Source Part Number: 064463-SI4116DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 1925pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 8.6 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient

N-Channel 25V 18A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

N-Channel 25V 18A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC

N-Channel 25V 18A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC