Vishay Intertechnology, Inc. 75V 20.5A 7.8W MOSFET Transistor SI4108DY-T1-GE3

MOSFET 75V 20.5A 7.8W 9.8mohm @ 10V Product overview: SI4108DY-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 20.5A, 7.8W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 20.5A, 7.8W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI4108DY-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 091326-SI4108DY-T1-GE3
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.6W (Ta), 7.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 20.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 54nC @ 10V
Max Input Capacitance: 2100pF @ 38V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.8 mOhm @ 13.8A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited