Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4104DY-T1-E3 SI4104DY-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 211633-SI4104DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 446pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 105 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4104DY-T1-E3 - 211633-SI4104DY-T1-E3 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4104DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Vishay Win Source Part Number: 211633-SI4104DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 446pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 105 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited
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Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4104DY-T1-E3 - 211633-SI4104DY-T1-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4104DY-T1-E3
211633-SI4104DY-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4104DY-T1-E3 211633-SI4104DY-T1-E3
Manufacturer: Vishay Win Source Part Number: 211633-SI4104DY-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 446pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 105 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 211633-SI4104DY-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4.6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 446pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 105 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI4104DY-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI4104DY-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI4104DY-T1-E3
MOSFET N-CH 100V 4.6A 8SO

MOSFET N-CH 100V 4.6A 8SO

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 211633-SI4104DY-T1-E3 SI4104DY-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI4104DY-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 2500 to 5000 milliwatts
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